Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid

2016 ◽  
Vol 8 (27) ◽  
pp. 17599-17605 ◽  
Author(s):  
Yongmin Kim ◽  
J. Provine ◽  
Stephen P. Walch ◽  
Joonsuk Park ◽  
Witchukorn Phuthong ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hydrofluoric Acid ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Etch Rates ◽  
Wet Etch

Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies

2017 ◽  
Vol 9 (2) ◽  
pp. 1858-1869 ◽  
Author(s):  
Tahsin Faraz ◽  
Maarten van Drunen ◽  
Harm C. M. Knoops ◽  
Anupama Mallikarjunan ◽  
Iain Buchanan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Wet Etch ◽  
N2 Plasma

scholarly journals Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate

2020 ◽  
Vol 117 (3) ◽  
pp. 031602 ◽  
Author(s):  
K. Arts ◽  
J. H. Deijkers ◽  
T. Faraz ◽  
R. L. Puurunen ◽  
W. M. M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Etch Rate ◽  
Atomic Layer ◽  
Low Energy ◽  
Layer Deposition ◽  
Wet Etch ◽  
Low Energy Ions

An Investigation of Silicon Oxide Thin Film by Atomic Layer Deposition

2004 ◽  
Vol 808 ◽  
Author(s):  
Joo-Hyeon Lee ◽  
Chang-Hee Han ◽  
Un-Jung Kim ◽  
Chong-Ook Park ◽  
Sa-Kyun Rha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
P Type ◽  
Wet Etch ◽  
Deposited Film ◽  
Deposited Films

ABSTRACTSiO2 thin films were prepared on p-type Si (100) substrates by atomic layer deposition (ALD) using SiH2Cl2 and O3(1.5 at.%)/O2 as precursors at 300. The growth rate of the deposited films increased linearly with increasing amount of simultaneous SiH2Cl2 and O3 exposures, and was saturated at about 0.35 nm/cycle with the reactant exposures of more than 3.6×109L. A larger amount of O3/O2 than that of SiH2Cl2 was required to obtain a saturated deposition reaction. The composition of the deposited film also varied with O3/O2 exposure at a fixed SiH2Cl2 exposure. The Si/O ratio gradually decreased to 0.5 with increasing amount of O3/O2 exposure. Finally, we also compared the physical and electrical characteristics of the ALD films with those of the films deposited by conventional chemical vapor deposition (CVD) methods. In spite of low process temperature, the SiO2 film prepared by the ALD method was in wet etch rate, surface roughness, leakage current and breakdown voltage superior to that by other several CVD methods.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

Interface Studies of Metal Oxides Grown Directly on Hybrid Perovskite by Atomic Layer Deposition

2019 ◽  
Author(s):  
Claire Burgess ◽  
Farzad Mardekatani Asl ◽  
Valerio Zardetto ◽  
Herbert Lifka ◽  
Sjoerd Veenstra ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Atomic Layer ◽  
Hybrid Perovskite ◽  
Layer Deposition
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