scholarly journals The influence of thermal annealing treatment time on the performance of silver nanowire-based transparent thin film heater

2020 ◽  
Author(s):  
Y. M. Huda ◽  
V. Fauzia
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Treatment Time ◽  
Annealing Treatment ◽  
Silver Nanowire ◽  
Thermal Annealing Treatment

CdCO3 nanocrystalline thin film grown by chemical bath and its transition to porous CdO by thermal annealing treatment

Optik ◽  
2018 ◽  
Vol 171 ◽  
pp. 347-355 ◽  
Author(s):  
G.E. Moreno Morales ◽  
M.E. Araiza Garcia ◽  
S. Cruz Cruz ◽  
B. Rebollo Plata ◽  
O. Portillo Moreno ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Annealing Treatment ◽  
Nanocrystalline Thin Film ◽  
Thermal Annealing Treatment

scholarly journals Improving the Stability and Performance of Perovskite Light-Emitting Diodes by Thermal Annealing Treatment

2016 ◽  
Vol 28 (32) ◽  
pp. 6906-6913 ◽  
Author(s):  
Jae Choul Yu ◽  
Dae Woo Kim ◽  
Da Bin Kim ◽  
Eui Dae Jung ◽  
Jong Hyun Park ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Light Emitting Diodes ◽  
Annealing Treatment ◽  
Light Emitting ◽  
Thermal Annealing Treatment ◽  
And Performance ◽  
The Stability

Formation of Silicides by Rapid Thermal Annealing Over Polycrystalline Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
J. Narayan ◽  
T. A. Stephenson ◽  
T. Brat ◽  
D. Fathy ◽  
S. J. Pennycook
Keyword(s):  
Titanium Oxide ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Annealing Treatment ◽  
External Layer ◽  
Rich Mixture ◽  
Thermal Annealing Treatment ◽  
Rapid Thermal Annealing Treatment

ABSTRACTThe formation of titanium suicide over polycrystalline silicon has been investigated after rapid thermal annealing treatment in nitrogen and argon ambients. After rapid thermal annealing 300 Å thick titanium overlayer at 900°C for 10 seconds, the sheet resistance of about 3 Ω/□ was achieved, which decreased to 2 Ω/□ after 1100°C / 10s treatment. The TiSi2 Phase was found to be stable after RTA treatments up to 1100°C /10s with no or negligible migration of titanium along the grain boundaries in polycrystalline silicon. In the nitrogen ambient, an external layer (titanium rich, mixture of titanium oxide and nitride) was observed to form after the RTA treatment, but the surface was found clean in the argon ambient.

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