scholarly journals Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment

2016 ◽  
Vol 120 (3) ◽  
pp. 034504 ◽  
Author(s):  
J. Liang ◽  
S. Nishida ◽  
M. Arai ◽  
N. Shigekawa
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Annealing Treatment ◽  
Thermal Annealing Treatment

Effects of thermal annealing treatment on the optical and the electrical properties of GaN films grown on Si substrates

2012 ◽  
Vol 60 (10) ◽  
pp. 1809-1813
Author(s):  
Minyoung Lee ◽  
Hyunsik Im ◽  
Hyungsang Kim ◽  
Dong-Seok Kim ◽  
Jung-Hee Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Annealing Treatment ◽  
Si Substrates ◽  
Thermal Annealing Treatment

The Microstructure of ZrN/GaAs Schottky Contacts and its Correlation with Electrical Properties.

1991 ◽  
Vol 240 ◽  
Author(s):  
Prashant Phatak ◽  
Mitsuru Imaizumi ◽  
E. R. Weber ◽  
N. Newman ◽  
Z. Liliental-Weber
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Treatment ◽  
Schottky Contacts ◽  
High Resolution Tem ◽  
Thermal Annealing Treatment ◽  
Effect Transistor ◽  
Abrupt Interface ◽  
Rapid Thermal Annealing Treatment

ABSTRACTThe self-aligned GaAs metal-semiconductor field-effect transistor technology requires that the gate material maintains a good rectifying contact with the GaAs substrate when subjected to high-temperature annealing around 800–900° C. ZrN Schottky contacts to GaAs were previously shown to have excellent electrical properties at high tempratures. An increase of barrier height and a decrease in the reverse breakdown voltage with rapid thermal annealing at temperatures up to 900° C has been observed. The ideality factor increases after rapid thermal annealing at 900° C.In an attempt to explain the above observations, we investigated the interface structure of such contacts under as-deposited and annealed conditions. By high resolution TEM it was found that the interface of as-deposited samples is fairly flat but protrusions form after rapid thermal annealing treatment at 850 and 900° C. The selected area diffraction analysis shows the presence of ZrO2 near the interface.It is therefore likely that protrusions are the cause of the degradation of electrical properties of the contacts. These protrusions may be caused by the presence of a residual oxide layer before deposition. Indeed, a deposition of ZrN after sputter cleaning the substrates before deposition procedure resulted in an abrupt interface even after annealing at 900° C.

CdCO3 nanocrystalline thin film grown by chemical bath and its transition to porous CdO by thermal annealing treatment

Optik ◽  
2018 ◽  
Vol 171 ◽  
pp. 347-355 ◽  
Author(s):  
G.E. Moreno Morales ◽  
M.E. Araiza Garcia ◽  
S. Cruz Cruz ◽  
B. Rebollo Plata ◽  
O. Portillo Moreno ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Annealing Treatment ◽  
Nanocrystalline Thin Film ◽  
Thermal Annealing Treatment

scholarly journals Improving the Stability and Performance of Perovskite Light-Emitting Diodes by Thermal Annealing Treatment

2016 ◽  
Vol 28 (32) ◽  
pp. 6906-6913 ◽  
Author(s):  
Jae Choul Yu ◽  
Dae Woo Kim ◽  
Da Bin Kim ◽  
Eui Dae Jung ◽  
Jong Hyun Park ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Light Emitting Diodes ◽  
Annealing Treatment ◽  
Light Emitting ◽  
Thermal Annealing Treatment ◽  
And Performance ◽  
The Stability

Formation of Silicides by Rapid Thermal Annealing Over Polycrystalline Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
J. Narayan ◽  
T. A. Stephenson ◽  
T. Brat ◽  
D. Fathy ◽  
S. J. Pennycook
Keyword(s):  
Titanium Oxide ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Annealing Treatment ◽  
External Layer ◽  
Rich Mixture ◽  
Thermal Annealing Treatment ◽  
Rapid Thermal Annealing Treatment

ABSTRACTThe formation of titanium suicide over polycrystalline silicon has been investigated after rapid thermal annealing treatment in nitrogen and argon ambients. After rapid thermal annealing 300 Å thick titanium overlayer at 900°C for 10 seconds, the sheet resistance of about 3 Ω/□ was achieved, which decreased to 2 Ω/□ after 1100°C / 10s treatment. The TiSi2 Phase was found to be stable after RTA treatments up to 1100°C /10s with no or negligible migration of titanium along the grain boundaries in polycrystalline silicon. In the nitrogen ambient, an external layer (titanium rich, mixture of titanium oxide and nitride) was observed to form after the RTA treatment, but the surface was found clean in the argon ambient.

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