scholarly journals Spin injection efficiency through the pumping in epitaxial Co2MnSi/Pt thin film

AIP Advances ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 085311
Author(s):  
Y. Sasaki ◽  
S. Sugimoto ◽  
Y. K. Takahashi ◽  
S. Kasai
Keyword(s):  
Thin Film ◽  
Spin Injection ◽  
Injection Efficiency

Substantial and stable magnetoresistance and spin conductance in phosphorene-based spintronic devices with Co electrodes

2021 ◽  
Author(s):  
Zhao Chen ◽  
Guojun Li ◽  
Haidi Wang ◽  
Qiong Tang ◽  
ZhongJun Li
Keyword(s):  
Spin Transport ◽  
Spin Injection ◽  
Injection Efficiency ◽  
Tunnel Magnetoresistance ◽  
Spintronic Devices ◽  
Magnetoresistance Ratio ◽  
Large Tunnel ◽  
Spin Conductance

Phosphorene-based device with fcc Co(111) electrodes shows excellent spin transport characteristics: large tunnel magnetoresistance ratio and stable spin injection efficiency.

Increase in spin injection efficiency of a CoFe∕MgO(100) tunnel spin injector with thermal annealing

2005 ◽  
Vol 86 (5) ◽  
pp. 052901 ◽  
Author(s):  
R. Wang ◽  
X. Jiang ◽  
R. M. Shelby ◽  
R. M. Macfarlane ◽  
S. S. P. Parkin ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Spin Injection ◽  
Injection Efficiency

Enhanced spin injection efficiency and extended spin lifetimes in graphene spin valves

2011 ◽  
Author(s):  
Wei Han ◽  
J. R. Chen ◽  
K. M. McCreary ◽  
H. Wen ◽  
R. K. Kawakami
Keyword(s):  
Spin Injection ◽  
Spin Valves ◽  
Injection Efficiency

Efficient spin depolarization in ZnCdSe spin detector: an important factor limiting optical spin injection efficiency in ZnMnSe∕ZnCdSe spin light-emitting structures

2004 ◽  
Vol 85 (22) ◽  
pp. 5260-5262 ◽  
Author(s):  
W. M. Chen ◽  
I. A. Buyanova ◽  
K. Kayanuma ◽  
Z. H. Chen ◽  
A. Murayama ◽  
...  
Keyword(s):  
Spin Injection ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Spin Depolarization

Spin-injection efficiency and magnetoresistance in a ferromagnet-semiconductor-ferromagnet trilayer

2005 ◽  
Vol 97 (10) ◽  
pp. 103907 ◽  
Author(s):  
S. Agrawal ◽  
M. B. A. Jalil ◽  
K. L. Teo ◽  
Y. F. Liew
Keyword(s):  
Spin Injection ◽  
Injection Efficiency

Spin Injection Efficiency at the Source/Channel Interface of Spin Transistors

2008 ◽  
Vol 7 (1) ◽  
pp. 34-39 ◽  
Author(s):  
Junjun Wan ◽  
Marc Cahay ◽  
Supriyo Bandyopadhyay
Keyword(s):  
Spin Injection ◽  
Injection Efficiency ◽  
Spin Transistors

Enhancement of spin injection efficiency in a T-shaped organic device

2013 ◽  
Vol 43 (2) ◽  
pp. 129-134
Author(s):  
ZhaoTao DOU ◽  
JunFeng REN ◽  
XiaoBo YUAN ◽  
GuiChao HU ◽  
RuiRong SONG
Keyword(s):  
Spin Injection ◽  
Injection Efficiency

Spin Diffusion in the Finite Magnetic Heterojunction

2017 ◽  
Vol 727 ◽  
pp. 410-414
Author(s):  
Yi Lin Mi
Keyword(s):  
Spin Polarization ◽  
Organic Semiconductors ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Great Influence ◽  
Injection Efficiency ◽  
Spintronic Devices ◽  
Ferromagnetic Electrodes ◽  
Spin Polarons ◽  
The Difference

Spin diffusion in the finite magnetic heterojunction was explored considering the spin dependent conductivity. In organic semiconductor spintronic devices, the up-spin and down-spin polarons have different density once spin injection happens from ferromagnetic electrodes into organic semiconductors. The difference results in the spin dependent conductivity. The calculations show that the spin injection efficiency is dependent on the spin dependent conductivity and the size of the layers. The spin dependent conductivity has great influence on the spin injection efficiency in the finite magnetic heterojunction, when the spin polarization of the organic semiconductors is moderate.

Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer

2012 ◽  
Vol 190 ◽  
pp. 89-92
Author(s):  
M.V. Dorokhin ◽  
Y.A. Danilov ◽  
Alexei V. Kudrin ◽  
E.I. Malysheva ◽  
M.M. Prokof’eva ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Potential Barrier ◽  
Light Emitting Diodes ◽  
Spin Injection ◽  
High Potential ◽  
Hole Injection ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Electroluminescence Intensity ◽  
High Potential Barrier

The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.

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