Electrical and plasma characterization of a hybrid plasma source combined with inductively coupled and capacitively coupled plasmas for O atom generation

2020 ◽  
Vol 27 (9) ◽  
pp. 093504
Author(s):  
Kwan-Yong Kim ◽  
Kyung-Hyun Kim ◽  
Jun-Hyeon Moon ◽  
Chin-Wook Chung
2020 ◽  
Vol 35 (10) ◽  
pp. 2369-2377
Author(s):  
Helmar Wiltsche ◽  
Matthias Wolfgang

The MICAP is a microwave driven plasma source employing nitrogen as the plasma gas. In this work we compare LODs and LOQs obtained in axial viewing with those obtained by ICP-OES and evaluate the effect of air instead of nitrogen as the plasma gas.


Author(s):  
A. E. Wendt ◽  
D. F. Beale ◽  
W. N. G. Hitchon ◽  
E. Keiter ◽  
V. Kolobov ◽  
...  

2008 ◽  
Vol 74 (2) ◽  
pp. 155-161 ◽  
Author(s):  
K. T. A. L. BURM

AbstractAn electronic identity relation, relating capacitively coupled plasma sources to corresponding inductively coupled plasma sources, has been derived, starting from the Maxwell relations for matter and the characteristics of a capacitor and of an inductor. Furthermore, the breakdown conditions for both capacitively coupled plasmas and for inductively coupled plasmas as well as their optimal operation frequency ranges are discussed.


Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5036
Author(s):  
Chulhee Cho ◽  
Kwangho You ◽  
Sijun Kim ◽  
Youngseok Lee ◽  
Jangjae Lee ◽  
...  

Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight into previously observed phenomena, SiO2 etching characteristics were investigated under various pulsed plasma conditions and analyzed through plasma diagnostics. Specifically, the disappearance of micro-trenching from the use of pulse-modulated plasma is analyzed via self-bias, and the phenomenon that as power off-time increases, the sidewall angle increases is interpreted via radical species density and self-bias. Further, the change from etching to deposition with decreased peak power during processing is understood via self-bias and electron density. It is expected that this research will provide an informative window for the optimization of SiO2 etching and for basic processing databases including plasma diagnosis for advanced plasma processing simulators.


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