Interplay between ferroelectric and quantum paraelectric instabilities in Eu0.7Ba0.3TiO3 Perovskite oxide: Defect dipoles and ferroelectric instability induced by oxygen vacancies

2020 ◽  
Vol 128 (1) ◽  
pp. 014104
Author(s):  
Ghulam Hassnain Jaffari ◽  
Asad Muhammad Iqbal
Keyword(s):  
Oxygen Vacancies ◽  
Perovskite Oxide ◽  
Quantum Paraelectric

scholarly journals RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES

2013 ◽  
Vol 27 (29) ◽  
pp. 1330021 ◽  
Author(s):  
YU-LING JIN ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
GUO-ZHEN YANG
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Complex Oxide ◽  
Perovskite Oxide ◽  
Ferroelectric Polarization ◽  
Oxide Heterostructures ◽  
Polarization Voltage ◽  
Data Memory ◽  
Current Voltage

Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The important role of the ferroelectric polarization was also carefully confirmed by analyzing the relationship between the current–voltage and polarization–voltage loops in the ferroelectric oxide heterostructures. The physical mechanisms have been revealed based on the developed numerical model.

scholarly journals Oxygen Vacancies in Perovskite Oxide Piezoelectrics

Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5596
Author(s):  
Marina Tyunina
Keyword(s):  
Mechanical Properties ◽  
High Temperature ◽  
Chemical Reactions ◽  
Oxygen Vacancies ◽  
Perovskite Oxide ◽  
Semiconductor Physics ◽  
Physical Conditions ◽  
Ferroelectric Behavior ◽  
Piezoelectric Performance ◽  
Mobile Oxygen

The excellent electro-mechanical properties of perovskite oxide ferroelectrics make these materials major piezoelectrics. Oxygen vacancies are believed to easily form, migrate, and strongly affect ferroelectric behavior and, consequently, the piezoelectric performance of these materials and devices based thereon. Mobile oxygen vacancies were proposed to explain high-temperature chemical reactions half a century ago. Today the chemistry-enabled concept of mobile oxygen vacancies has been extrapolated to arbitrary physical conditions and numerous effects and is widely accepted. Here, this popular concept is questioned. The concept is shown to conflict with our modern physical understanding of ferroelectrics. Basic electronic processes known from mature semiconductor physics are demonstrated to explain the key observations that are groundlessly ascribed to mobile oxygen vacancies. The concept of mobile oxygen vacancies is concluded to be misleading.

Simultaneous visualization of oxygen vacancies and the accompanying cation shifts in a perovskite oxide by combining annular imaging techniques

2012 ◽  
Vol 100 (19) ◽  
pp. 193112 ◽  
Author(s):  
Shunsuke Kobayashi ◽  
Scott D. Findlay ◽  
Naoya Shibata ◽  
Teruyasu Mizoguchi ◽  
Yukio Sato ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Imaging Techniques ◽  
Perovskite Oxide ◽  
Simultaneous Visualization

Hole-Proton Mixed Conduction of Perovskite-Oxide Thin Film with Oxygen Vacancies and Lattice Distortion for SOFC Electrode

2017 ◽  
Vol 78 (1) ◽  
pp. 1973-1977
Author(s):  
Tohru Higuchi ◽  
Shoto Furuichi ◽  
Wataru Namiki ◽  
Makoto Takayanagi ◽  
Makoto Minohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancies ◽  
Lattice Distortion ◽  
Perovskite Oxide ◽  
Oxide Thin Film ◽  
Mixed Conduction

scholarly journals Epitaxial growth of perovskite oxide films facilitated by oxygen vacancies

2021 ◽  
Author(s):  
Marina Tyunina ◽  
Leonid L. Rusevich ◽  
Eugene A Kotomin ◽  
O Pacherova ◽  
T Kocourek ◽  
...  
Keyword(s):  
Single Crystal ◽  
Metal Oxides ◽  
Epitaxial Growth ◽  
Oxygen Vacancies ◽  
Epitaxial Films ◽  
Perovskite Oxide ◽  
Abo3 Perovskite ◽  
Film Substrate ◽  
Perovskite Type ◽  
Advanced Applications

Single-crystal epitaxial films of technologically important and scientifically intriguing multifunctional ABO3 perovskite-type metal oxides are essential for advanced applications and understanding of these materials. In such films, a film-substrate misfit...

Toward Switchable Photovoltaic Effect via Tailoring Mobile Oxygen Vacancies in Perovskite Oxide Films

2016 ◽  
Vol 8 (50) ◽  
pp. 34590-34597 ◽  
Author(s):  
Chen Ge ◽  
Kui-juan Jin ◽  
Qing-hua Zhang ◽  
Jian-yu Du ◽  
Lin Gu ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Photovoltaic Effect ◽  
Oxide Films ◽  
Perovskite Oxide ◽  
Mobile Oxygen

Thermoelectric Properties of Cd3−xAxTeO6 (A = In3+, La3+ and Bi3+) Ceramics

2001 ◽  
Vol 691 ◽  
Author(s):  
Weiling Luan ◽  
Yue Jin Shan ◽  
Mitsuru Itoh ◽  
Hideo Imoto
Keyword(s):  
Seebeck Coefficient ◽  
Temperature Dependence ◽  
Oxygen Vacancies ◽  
Negative Temperature ◽  
Charge Carriers ◽  
Perovskite Oxide ◽  
Thermoelectric Power Factor ◽  
Metallic Behavior ◽  
Seebeck Coefficients ◽  
Trivalent Cations

ABSTRACTPerovskite oxide Cd3TeO6 was electron-doped by the introduction of oxygen vacancies and substitution of trivalent cations, In3+, La3+ and Bi3+. Their electric properties were investigated and compared with that of undoped Cd3TeO6. Negative temperature dependence of resistivity was observed in undoped, air-sintered Cd3TeO6. The resis tivity of Cd3−xAxTeO6 (A = In3+, La3+ and Bi3+) showed a metallic behavior with very slight temperature dependence. Indium-doped samples gave a low resistivity, which were decreased by more than three orders of magnitudes than that of air-sintered, undoped Cd3TeO6. The negative Seebeck coefficient and Hall coefficient obtained from all samples indicate that electrons are the charge carriers. The absolute Seebeck coefficients values of doped samples are decreased by 5 ∼ 10 times than that observed in undoped Cd3TeO6. Fortunately, the resistivity of indium-doped samples is low enough to provide a good thermoelectric power factor, and the optimum value of Cd2.97In0.03TeO6 was calculated as 1.35×10−4 Wm−1K−2. This result is close to that of the current best n-type perovskite thermoelectric material Ba0.4Sr0.6PbO3.

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