scholarly journals Epitaxial growth of perovskite oxide films facilitated by oxygen vacancies

2021 ◽  
Author(s):  
Marina Tyunina ◽  
Leonid L. Rusevich ◽  
Eugene A Kotomin ◽  
O Pacherova ◽  
T Kocourek ◽  
...  
Keyword(s):  
Single Crystal ◽  
Metal Oxides ◽  
Epitaxial Growth ◽  
Oxygen Vacancies ◽  
Epitaxial Films ◽  
Perovskite Oxide ◽  
Abo3 Perovskite ◽  
Film Substrate ◽  
Perovskite Type ◽  
Advanced Applications

Single-crystal epitaxial films of technologically important and scientifically intriguing multifunctional ABO3 perovskite-type metal oxides are essential for advanced applications and understanding of these materials. In such films, a film-substrate misfit...

Epitaxial Growth of CaxSr1−xF2 Layers on CaF2 by Vacuum Evaporation

1985 ◽  
Vol 54 ◽  
Author(s):  
Nicholas G. Norton ◽  
K. S. Knight
Keyword(s):  
Single Crystal ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Single Phase ◽  
Epitaxial Films ◽  
Mixed Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vegard’S Law ◽  
Substrate Temperatures

ABSTRACTThe evaporation and epitaxial growth on single crystal CaF2 substrates of CaF2/SrF2 mixtures are investigated. The evaporated films are studied with X-ray diffraction and optical microscopy.X-ray diffraction results show that the evaporation of yCaF2 + (1 - y)SrF2 mixtures from a single boat, with y in the range 0 to 1, result in single phase, mixed crystals of composition CaxSr1−xF2. If Vegard's law is assumed to apply it is found experimentally that the film composition is the same as that of the source.For the evaporation of CaF2 and SrF2 onto cleaved CaF2 crystals it is shown that the best quality epitaxial films are obtained at substrate temperatures of∼400°C. At temperatures <400°C there is some broadening of the X-ray diffraction spots from the overlayer compared with those from the substrate. At temperatures>400°C there is a tendency for the epitaxial films to delaminate from the substrate.

Novel epitaxial growth of barium titanate thin films by electrodeposition

2000 ◽  
Vol 15 (12) ◽  
pp. 2583-2586 ◽  
Author(s):  
Jun Tamaki ◽  
Gregory K. L. Goh ◽  
Fred F. Lange
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Counter Electrode ◽  
Epitaxial Films ◽  
Buffer Layers

Electrodeposition was used to grow epitaxially BaTiO3 thin films on SrTiO3 single-crystal substrates with La0.7Sr0.3MnO3 (LSMO) conducting buffer layers. The epitaxial films appeared to consist of very small (ø10 nm) particles. The film completely covered the substrate when the reaction was performed at temperatures between 60 and 90 °C with LSMO potentials of –0.5 to –1.0 V against a Pt counter-electrode. It appeared that an electrophoretic force, acting on BaTiO3 nuclei within the solution, facilitated the deposition of the film.

Oxygen vacancies modulated coexistence of antiferromagnetism and ferromagnetism in ZnxCo1−xO single crystal epitaxial films

2019 ◽  
Vol 473 ◽  
pp. 320-323 ◽  
Author(s):  
Li Cai ◽  
Qiang Cao ◽  
Kun Zhang ◽  
Maoxiang Fu ◽  
Jiahui Liu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Oxygen Vacancies ◽  
Epitaxial Films

scholarly journals Single-crystal high entropy perovskite oxide epitaxial films

2018 ◽  
Vol 2 (6) ◽  
Author(s):  
Yogesh Sharma ◽  
Brianna L. Musico ◽  
Xiang Gao ◽  
Chengyun Hua ◽  
Andrew F. May ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Films ◽  
Perovskite Oxide ◽  
High Entropy

Epitaxial growth and rectification characteristics of double perovskite oxide La2NiMnO6 films on Nb-SrTiO3 single crystal substrates

2011 ◽  
Vol 519 (18) ◽  
pp. 6148-6150 ◽  
Author(s):  
G.Y. Gao ◽  
Y. Wang ◽  
Y. Jiang ◽  
L.F. Fei ◽  
N.Y. Chan ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Double Perovskite ◽  
Perovskite Oxide

Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

2012 ◽  
Vol 1426 ◽  
pp. 331-337
Author(s):  
Hiroshi Noge ◽  
Akira Okada ◽  
Ta-Ko Chuang ◽  
J. Greg Couillard ◽  
Michio Kondo
Keyword(s):  
Epitaxial Growth ◽  
Heating Temperature ◽  
Exothermic Reaction ◽  
Epitaxial Films ◽  
Si Substrates ◽  
Glass Substrates ◽  
Good Crystallinity ◽  
Crystalline Films ◽  
Si Films ◽  
First Time

ABSTRACTWe have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20 - 50 ºC increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge0.5 film is as low as 5 x 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm2/Vs, confirming the good crystallinity of the epitaxial films.

scholarly journals Magnetic anisotropy in single-crystal high-entropy perovskite oxide La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 films

2020 ◽  
Vol 4 (1) ◽  
Author(s):  
Yogesh Sharma ◽  
Qiang Zheng ◽  
Alessandro R. Mazza ◽  
Elizabeth Skoropata ◽  
Thomas Heitmann ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Single Crystal ◽  
Perovskite Oxide ◽  
High Entropy

Flux-assisted single crystal growth and heteroepitaxy of perovskite-type mixed-metal borohydrides

CrystEngComm ◽  
2015 ◽  
Vol 17 (13) ◽  
pp. 2682-2689 ◽  
Author(s):  
Pascal Schouwink ◽  
Adrien Ramel ◽  
Enrico Giannini ◽  
Radovan Černý
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Single Crystal Growth ◽  
Mixed Metal ◽  
Perovskite Type

Single crystals of mixed-metal perovskite-type borohydride KCa(BH4)3 are prepared by using an easily generalized flux melting procedure based on eutectic borohydride systems.

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