Hole-Proton Mixed Conduction of Perovskite-Oxide Thin Film with Oxygen Vacancies and Lattice Distortion for SOFC Electrode

2017 ◽  
Vol 78 (1) ◽  
pp. 1973-1977
Author(s):  
Tohru Higuchi ◽  
Shoto Furuichi ◽  
Wataru Namiki ◽  
Makoto Takayanagi ◽  
Makoto Minohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancies ◽  
Lattice Distortion ◽  
Perovskite Oxide ◽  
Oxide Thin Film ◽  
Mixed Conduction

Surface Electron–Ion Mixed Conduction of Ti0.99Sc0.01O2−δ Thin Film with Lattice Distortion and Oxygen Vacancies

2019 ◽  
Vol 88 (5) ◽  
pp. 054711 ◽  
Author(s):  
Kinya Kawamura ◽  
Masaki Sekine ◽  
Daiki Nishioka ◽  
Ryu Yukawa ◽  
Koji Horiba ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancies ◽  
Lattice Distortion ◽  
Surface Electron ◽  
Mixed Conduction

Surface Electron–Ion Mixed Conduction of BaTiO3−δ Thin Film with Oxygen Vacancies

2021 ◽  
Vol 90 (1) ◽  
pp. 014707
Author(s):  
Tomoasa Takada ◽  
Takeshi Fujita ◽  
Takehiro Imagawa ◽  
Emi Yamamoto ◽  
Jun Kano ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancies ◽  
Surface Electron ◽  
Mixed Conduction

Influence of Schottky Interfaces on Dielectric Properties in Perovskite-Type Oxide Thin-Film Capacitors

2011 ◽  
Vol 485 ◽  
pp. 203-206
Author(s):  
Naohiro Horiuchi ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi
Keyword(s):  
Thin Film ◽  
Estimation Method ◽  
Hysteretic Behavior ◽  
Perovskite Oxide ◽  
Oxide Thin Film ◽  
Perovskite Type Oxide ◽  
Thin Film Capacitors ◽  
Capacitance Voltage ◽  
Perovskite Type ◽  
Schottky Model

An estimation method of the influence of interfaces on properties in perovskite-type oxide thin-film capacitors is presented. We proposed a modified Schottky model that can be employed to explain the electric properties of metal/perovskite-type oxide junctions. The modified model considers the electric field dependence of permittivity and the flow of electrons from metal to defect states located in the band gap of the perovskite oxide. The simulation based on this model could successfully describe the results of capacitance-voltage measurements of junctions between metals (Pt, Au, and Ag) and Nb-doped SrTiO3, which were not explained by the conventional Schottky model. Additionally, a simulation for a thin-film capacitor with hysteretic behavior could depict an asymmetric capacitance-voltage curve.

Defect engineering in perovskite oxide thin films

2021 ◽  
Author(s):  
Yunlong Sun ◽  
Jack Yang ◽  
Danyang Wang ◽  
Sean Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Perovskite Oxide ◽  
Oxide Thin Film ◽  
Multifunctional Materials ◽  
Defect Engineering ◽  
Oxide Thin Films ◽  
Photovoltaic Properties ◽  
Microelectronic Devices ◽  
Perovskite Oxide Thin Films

Perovskite oxide thin film is a category of multifunctional materials that have intriguing electrical, magnetic, and photovoltaic properties that can be harnessed combinatorially in future microelectronic devices. However, the inevitable...

scholarly journals Characterization of Crystalline Structure and Morphology of Ga2O3 Thin Film Grown by MOCVD Technique

2016 ◽  
Vol 721 ◽  
pp. 253-257
Author(s):  
Alvars Kjapsna ◽  
Lauris Dimitrocenko ◽  
Ivars Tale ◽  
Anatoly Trukhin ◽  
Reinis Ignatans ◽  
...  
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Growth Process ◽  
Oxygen Vacancies ◽  
Oxide Thin Film ◽  
Structure And Morphology ◽  
Carrier Gases ◽  
Compositional Properties ◽  
Mocvd Technique

Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.

Perovskite Oxide Thin Film Heterostructures for IR Detector

1998 ◽  
Vol 12 (29n31) ◽  
pp. 3381-3384
Author(s):  
N. J. Wu ◽  
A. Ignatiev ◽  
Y. S. Chen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Infrared Detectors ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Perovskite Oxide ◽  
Oxide Thin Film ◽  
Deposition Technique ◽  
Ir Detector

Mn and Sb-doped PbZrTiO 3 (PMSZT) ferroelectric thin films were integrated to high-T c superconducting YB2Cu3O 7-x (YBCO) thin films on LaAlO 3 (100) and YSZ/Si (100) substrates by the pulsed laser deposition technique. The PZT/YBCO and PM-SZT/YBCO infrared detectors were fabricated and examined as to their photovoltage and photocurrent in response to IR source temperature, and IR wavelength. The detector has relatively high IR sensitivity with a detectivity of ~ 108 cm · Hz 1/2/ W in the wavelength range of 3–16 μm.

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