scholarly journals Au induced lateral crystallization of amorphous Ge with stress stimulation at 130 ○C

AIP Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 055306
Author(s):  
Taiki Nishijima ◽  
Satoshi Shimizu ◽  
Kinta Kusano ◽  
Kazuki Kudo ◽  
Masahiro Furuta ◽  
...  
2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)


2008 ◽  
Vol 39 (10) ◽  
pp. 1189-1194 ◽  
Author(s):  
Xiangbin Zeng ◽  
Huijuan Wang ◽  
Xiaowei Sun ◽  
Junfeng Li

2006 ◽  
Vol 45 (10A) ◽  
pp. 7675-7676 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Tzu-Yi Chi ◽  
Jun-Chin Liu ◽  
Chung-Yuan Kung ◽  
In-Cha Hsein

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