Characterization of (100)-Dominantly Oriented Poly-Si Thin Film Transistors Using Multi-Line Beam Continuous-Wave Laser Lateral Crystallization

T. T. Nguyen; M. Hiraiwa; T. Hirata; S.-I. Kuroki

doi:10.1149/07510.0049ecst

Characterization of (100)-Dominantly Oriented Poly-Si Thin Film Transistors Using Multi-Line Beam Continuous-Wave Laser Lateral Crystallization

ECS Transactions ◽

10.1149/07510.0049ecst ◽

2016 ◽

Vol 75 (10) ◽

pp. 49-54

Author(s):

T. T. Nguyen ◽

M. Hiraiwa ◽

T. Hirata ◽

S.-I. Kuroki

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Wave Laser ◽

Line Beam ◽

Lateral Crystallization ◽

Si Thin Film

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Characterization of (100)-Dominantly Oriented Poly-Si Thin Film Transistors Using Multi-Line Beam Continuous-Wave Laser Lateral Crystallization

ECS Meeting Abstracts ◽

10.1149/ma2016-02/33/2118 ◽

2016 ◽

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Wave Laser ◽

Line Beam ◽

Lateral Crystallization ◽

Si Thin Film

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Characteristics of Poly-Si Thin Film Transistors with Highly Biaxially Oriented Linearly Arranged Poly-Si Thin Films Using Double Line Beam Continuous-Wave Laser Lateral Crystallization

ECS Meeting Abstracts ◽

10.1149/ma2014-02/47/1906 ◽

2014 ◽

Keyword(s):

Thin Film ◽

Thin Films ◽

Thin Film Transistors ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Double Line ◽

Wave Laser ◽

Line Beam ◽

Lateral Crystallization ◽

Si Thin Film

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High-performance poly-Si thin film transistors with highly biaxially oriented poly-Si thin films using double line beam continuous-wave laser lateral crystallization

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.03cc02 ◽

2014 ◽

Vol 53 (3S1) ◽

pp. 03CC02 ◽

Cited By ~ 20

Author(s):

Masayuki Yamano ◽

Shin-Ichiro Kuroki ◽

Tadashi Sato ◽

Koji Kotani

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Double Line ◽

Wave Laser ◽

Line Beam ◽

Lateral Crystallization ◽

Si Thin Film

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Characteristics of Poly-Si Thin Film Transistors with Highly Biaxially Oriented Linearly Arranged Poly-Si Thin Films Using Double Line Beam Continuous-Wave Laser Lateral Crystallization

ECS Transactions ◽

10.1149/06410.0039ecst ◽

2014 ◽

Vol 64 (10) ◽

pp. 39-44

Author(s):

M. Yamano ◽

S.-I. Kuroki ◽

T. Hirata ◽

T. Sato ◽

K. Kotani ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Thin Film Transistors ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Double Line ◽

Wave Laser ◽

Line Beam ◽

Lateral Crystallization ◽

Si Thin Film

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Ultrahigh-performance poly-si thin film transistor using multi-line beam continuous-wave laser lateral crystallization

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) ◽

10.1109/am-fpd.2016.7543690 ◽

2016 ◽

Author(s):

Thuy Thi Nguyen ◽

Mitsuhisa Hiraiwa ◽

Tatsuaki Hirata ◽

Shin-Ichiro Kuroki

Keyword(s):

Thin Film ◽

Continuous Wave ◽

Thin Film Transistor ◽

Continuous Wave Laser ◽

Wave Laser ◽

Line Beam ◽

Lateral Crystallization ◽

Si Thin Film

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High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l311 ◽

2002 ◽

Vol 41 (Part 2, No. 3B) ◽

pp. L311-L313 ◽

Cited By ~ 86

Author(s):

Akito Hara ◽

Fumiyo Takeuchi ◽

Michiko Takei ◽

Katsuyuki Suga ◽

Kenichi Yoshino ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Alkali Glass ◽

Wave Laser ◽

Lateral Crystallization

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(Invited) Self-Aligned Four-Terminal Low-Temperature Polycrystalline-Silicon Thin-Film Transistors on Glass Substrate Using Continuous-Wave Laser Lateral Crystallization

ECS Transactions ◽

10.1149/07510.0037ecst ◽

2016 ◽

Vol 75 (10) ◽

pp. 37-47 ◽

Cited By ~ 1

Author(s):

A. Hara ◽

H. Ohsawa

Keyword(s):

Thin Film ◽

Low Temperature ◽

Glass Substrate ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Wave Laser ◽

Lateral Crystallization

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Tri-Gate Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization with Improved Electron Transport Properties

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bj03 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BJ03 ◽

Cited By ~ 9

Author(s):

Shuntaro Fujii ◽

Shin-Ichiro Kuroki ◽

Yuya Kawasaki ◽

Koji Kotani

Keyword(s):

Thin Film ◽

Electron Transport ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Electron Transport Properties ◽

Wave Laser ◽

Lateral Crystallization

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High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1269 ◽

2004 ◽

Vol 43 (4A) ◽

pp. 1269-1276 ◽

Cited By ~ 97

Author(s):

Akito Hara ◽

Michiko Takei ◽

Fumiyo Takeuchi ◽

Katsuyuki Suga ◽

Kenichi Yoshino ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Diode Pumped ◽

Wave Laser ◽

Lateral Crystallization

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Extension of the {100}-Oriented Grain-Boundary Free Si Thin Film Grown by a Continuous-Wave Laser Lateral Crystallization

Thin Solid Films ◽

10.1016/j.tsf.2020.138127 ◽

2020 ◽

Vol 708 ◽

pp. 138127

Author(s):

Muhammad Arif ◽

Nobuo Sasaki ◽

Yasuaki Ishikawa ◽

Yukiharu Uraoka

Keyword(s):

Thin Film ◽

Grain Boundary ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Wave Laser ◽

Lateral Crystallization ◽

Si Thin Film

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