Optimization of deposition parameter of Cr doped Eu2O3 thin films

2020 ◽  
Author(s):  
Ram Prakash ◽  
Sandeep Kumar
Keyword(s):  
Thin Films ◽  
Deposition Parameter

Conductivity of Yittria-Stabilized Zirconia Nanostructure Electrolyte for Solid Oxide Fuel Cell Application by Using RF Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 352-357
Author(s):  
S.Y. Jaffar ◽  
Yussof Wahab ◽  
Rosnita Muhammad ◽  
Z. Othaman ◽  
Zuhairi Ibrahim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Stabilized Zirconia ◽  
Deposition Parameter ◽  
Deposition Parameters ◽  
Ysz Thin Film ◽  
Temperature Rate ◽  
Lower Temperature

Yttria-stabilized zirconia (YSZ) thin films were deposited successfully using RF magnetron sputtering. The substrate had been used are sapphire glass. A pure ceramic of Zr-Y is synthesized and processed into a planar magnetron target which is reactively sputtered with an Argon-Oxygen gas mixture to form Zr-Y-O nanostructure. The aim of this research is to study the conductivity and roughness YSZ thin film by using RF magnetron sputtering by varying the temperature deposition parameter. By lowering the YSZ thin film into nanostructure would enable for SOFC to be operate at lower temperature below 400°C. The YSZ nanostructure were controlled by varying the deposition parameters, including the deposition temperature and the substrate used. The crystalline of YSZ structure at 100W and temperature 300°C. The surface morphology of the films proved that at 300°C temperature rate deposition showed optimum growth morphology and density of YSZ thin films. Besides, the high deposition subtrate temperature affected the thickness of YSZ thin film at 80nm by using surface profiler. A higher rate of deposition is achievable when the sputtering mode of the Zr-Y target is metallic as opposed to oxide. YSZ is synthesizing to obtain the optimum thin film for SOFC application.

Pulsed Laser Deposition of Collagen Thin Films

1995 ◽  
Vol 414 ◽  
Author(s):  
J. A. Conklin ◽  
C. M. Cotell ◽  
T. W. Barnett ◽  
D. C. Hansen
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Helical Structure ◽  
Film Deposition ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Deposition Parameter ◽  
Si Substrates ◽  
Vapor Quenching

AbstractThin films of collagen were prepared by pulsed laser deposition (PLD) at room temperature on Si substrates using a KrF laser (248 nm) over a fluence range from 0.2–1.5 Jcm-2. The effects on film composition and morphology of ambient gas (Ar, Ar/H2O vapor), quenching atmosphere (Ar, Ar/H2O vapor), and fluence were examined. Fourier transform infrared spectroscopy (FT- IR) demonstrated that, independent of deposition parameter, the PLD films contained the characteristic Amide I and II functionalities of the collagen target and indicated that the secondary structure was altered by the PLD process. The surface morphology of the films was a function of the laser fluence and the gas environment during either film deposition or quenching at the end of deposition. Preliminary gel electrophoresis examination of deposited films suggested the collagen had not maintained the triple helical structure of the native collagen. X-Ray diffraction (XRD) indicated that all of the films, deposited under any conditions, were predominantly amorphous.

Optical and Structural Analysis of GeC Thin Films Deposited by Reactive Pulsed Laser Ablation Technique

2010 ◽  
Vol 442 ◽  
pp. 178-186 ◽  
Author(s):  
H.Z. Shafi ◽  
A. Mahmood ◽  
Z. Ali ◽  
M. Mehmood
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Diagnostic Techniques ◽  
Optical Analysis ◽  
Deposition Parameter ◽  
Force Microscopy ◽  
Ablation Technique ◽  
Laser Ablation Technique

GeC thin films have been prepared by reactive pulsed laser ablation technique. Methane pressure (PCH4) was varied from 0 to 75 milli torrs (mT). Optical analysis of all the samples was performed by spectroscopic ellipsometry (SE). The optical constants i.e. refractive index (n), extinction coefficient (k), absorption coefficient (α) and thickness of deposited film(s) were obtained by modeling and simulations of ellipsometric data. It was found that deposition parameter (change in pressure of methane) has a profound effect on the properties of the deposited films. To support our results of optical analysis, other important diagnostic techniques like atomic force microscopy (AFM), Fourier Transform Infrared Spectroscopy (FTIR) etc. were employed.

The oxygen deficiency effect of VO2 thin films prepared by laser ablation

1997 ◽  
Vol 12 (2) ◽  
pp. 416-422 ◽  
Author(s):  
M. Nagashima ◽  
H. Wada
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Vanadium Dioxide ◽  
Room Temperature ◽  
Oxygen Deficiency ◽  
Deposition Condition ◽  
Temperature Coefficient Of Resistance ◽  
Deposition Parameter ◽  
Vo2 Thin Films ◽  
Vanadium Dioxide Thin Films

Vanadium dioxide thin films (VO2) have been deposited by laser ablation. The temperature dependence of resistivity and temperature coefficient of resistance (TCR) for each deposition condition were investigated. It was clarified that the TCR at room temperature (RT) can be optimized by controlling the oxygen pressure introduced during deposition as the deposition parameter. In the result, larger TCR's at RT were observed for the oxygen deficient condition of VO2 than for oxygen-richer samples. Obtained TCR values were 0.072/K and 0.045/K at 25°C for VO2 thin films deposited onto R-cut sapphire and SiO2/Si, respectively.

scholarly journals Deposition-Parameter-Determined Resistive Switching Characteristics in TiOx/Pb(Zr0.52Ti0.48)O3Bilayers

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Xiaoyu Zhou ◽  
Yuan Luo ◽  
Aidong Li ◽  
Di Wu
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Conductive Filament ◽  
Bipolar Resistive Switching ◽  
Deposition Parameter ◽  
Deposition Parameters ◽  
Diode Behavior ◽  
And Migration ◽  
Switching Characteristics ◽  
Pzt Ferroelectric Thin Films

Pb(Zr0.52Ti0.48)O3(PZT) ferroelectric thin films were deposited epitaxially, by pulsed laser deposition, on (001) SrTiO3substrates buffered with La0.7Sr0.3MnO3(LSMO) electrodes. AmorphousTiOxthin films were deposited on top of PZT at various temperatures and oxygen chamber pressures. Bipolar resistive switching characteristics of Pt/TiOx/PZT/LSMO heterostructures are found to vary withTiOxdeposition parameters, from an interface controlled ferroelectric diode behavior to a bulk-controlled conductive filament behavior. The observations are discussed in terms of the concentration and migration of oxygen vacancies in theTiOxlayer.

Structural and Optical Properties of Nickel (Ni)/indium Tin Oxide (ITO) Thin-Films Deposited by RF Magnetron Sputtering

2014 ◽  
Vol 895 ◽  
pp. 181-185 ◽  
Author(s):  
M. Sobri ◽  
A. Shuhaimi ◽  
M. Mazwan ◽  
K.M. Hakim ◽  
S. Najwa ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Rf Magnetron Sputtering ◽  
Sample Surface ◽  
Deposition Parameter ◽  
Ito Thin Films

Nickel (Ni)/ indium tin oxide (ITO) thin-films have been deposited on silicon (Si) and glass substrates using radio-frequency (RF) magnetron sputtering at 200°C temperature. ITO layer was deposited on top of Ni layer with various deposition parameter. The material and optical properties of the ITO samples with and without Ni seed layer were analyzed. X-ray diffraction studies shows that the films are crystalline with the typical ITO diffraction peaks of (222), (400) and (411). The FESEM and AFM images shows that the grains have uniform shapes and sizes. FESEM results reveal that the grain size along the sample surface decreases when the Ni seed layer is added. Both the samples shows higher transmittance of more than 95% in UV-vis spectrometer.

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