Propagation and interaction of two soliton in a quantum semiconductor plasma with exchange correlation effects

2017 ◽  
Vol 24 (6) ◽  
pp. 062103 ◽  
Author(s):  
Sourav Choudhury ◽  
Tushar Kanti Das ◽  
Malay Kr. Ghorui ◽  
Prasanta Chatterjee
2003 ◽  
Vol 118 (3) ◽  
pp. 1044-1053 ◽  
Author(s):  
M. van Faassen ◽  
P. L. de Boeij ◽  
R. van Leeuwen ◽  
J. A. Berger ◽  
J. G. Snijders

2021 ◽  
Author(s):  
Mojtaba Alipour ◽  
Parisa Fallahzadeh

Density functional theory formalisms of energy partitioning schemes are utilized to find out what energetic components govern interactions in halogenated complexes.


2021 ◽  
Author(s):  
Haifa Al-Yousef

Abstract The properties and conditions for the appearance of some nonlinear waves in a three-dimensional semiconductor plasma are discussed, by studying the described plasma fluid system with quantum gradient forces and degraded pressures. Our analytical procedure is built on the reductive perturbation theory to obtain the Kadomtsev-Petvashvili equation for the fluid model and solving it using the direct integration method and the Bäcklund transform. Through different solution methods we got different nonlinear solutions describing different pulse profiles such as soliton, kink and explosive pulses. This model can be used to identify the potential disturbances in a semiconductor plasma.


2007 ◽  
Vol 128 ◽  
pp. 219-224 ◽  
Author(s):  
P.P. Kostrobiy ◽  
Bogdan M. Markovych ◽  
Yuri Suchorski

An external electrostatic field of the order of a few tens of a volt per nanometer causes significant changes in the electron density distribution near a metal surface. Because of differing electronic distributions and varying responses of electrons to the applied field for various metals, the resulting local field distribution in the close vicinity of the surface should depend on the electronic properties of the particular metal, even for flat surfaces. Field-free and field-modified electron density distributions for different metal surfaces were calculated using the functional integration method. This approach enables the exchange-correlation effects to be correctly considered and makes it possible to account for the proper field-effect for broad field ranges without using the perturbation theory. The results of calculations are compared with the field-ion microscopic observations.


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