Laser evaporation deposition of superconducting and dielectric thin films

1988 ◽  
Vol 52 (21) ◽  
pp. 1825-1827 ◽  
Author(s):  
H. S. Kwok ◽  
P. Mattocks ◽  
L. Shi ◽  
X. W. Wang ◽  
S. Witanachchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Evaporation ◽  
Dielectric Thin Films

Properties of Dielectric Thin Films Formed by Laser Evaporation

1983 ◽  
Vol 29 ◽  
Author(s):  
H. Sankur
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Binary Systems ◽  
Evaporation Rate ◽  
High Vacuum ◽  
Optical Devices ◽  
Laser Evaporation ◽  
Material System ◽  
Optical And Electrical Properties ◽  
Dielectric Thin Films

ABSTRACTThe technique of laser evaporation for the deposition of thin films has been applied to a large class of materials including oxides, fluorides and II-VI semiconductors. The evaporations were performed in high vacuum or under O2 pressures of 10−3 Torr, on several types of substrates, by using CO2 lasers in CW and pulse modes. The thin films thus obtained have been characterized for their structural, optical and electrical properties.Entire ranges of mixtures in several binary systems (e.g., SnO2-SiO2), have been obtained by coevaporation, using mirrors to steer the laser beam among sources.Conditions that affect the stoichiometry and structural properties (laser parameters, background pressure, evaporation rate, substrate temperature) have been established for each material system. Differences in the evaporation behavior of materials under CW and pulsed conditions have been investigated for the case of ZnO. Present and future applications of this technique in the optical devices field are also discussed.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

Tunable microwave mixing in nonlinear dielectric thin films of SrTiO3 and Sr0.5Ba0.5TiO3

1995 ◽  
Vol 31 (21) ◽  
pp. 1814-1815 ◽  
Author(s):  
A.T. Findikoglu ◽  
D.W. Reagor ◽  
Q.X. Jia ◽  
X.D. Wu
Keyword(s):  
Thin Films ◽  
Dielectric Thin Films ◽  
Nonlinear Dielectric ◽  
Tunable Microwave

Sol-gel derived TiNb2 O7 dielectric thin films for transparent electronic applications

2017 ◽  
Vol 101 (2) ◽  
pp. 674-682 ◽  
Author(s):  
Ming-Chuan Chang ◽  
Chieh-Szu Huang ◽  
Yi-Da Ho ◽  
Cheng-Liang Huang
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dielectric Thin Films

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

Micro-Raman analysis of Bi Sr Ca Cu O superconducting thin films deposited by pulsed laser evaporation

1989 ◽  
Vol 162-164 ◽  
pp. 1105-1106 ◽  
Author(s):  
E. Faulques ◽  
P. Dupouy ◽  
G. Hauchecorne ◽  
F. Kerherve ◽  
A. Laurent ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Laser Evaporation ◽  
Superconducting Thin Films ◽  
Raman Analysis
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