Fabrication of dielectric thin films by sputtering deposition at different pressures with (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3ceramic as target

2011 ◽  
Vol 102 (9) ◽  
pp. 1180-1183
Author(s):  
Feng Shi
Keyword(s):  
Thin Films ◽  
Dielectric Thin Films ◽  
Sputtering Deposition

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

Tunable microwave mixing in nonlinear dielectric thin films of SrTiO3 and Sr0.5Ba0.5TiO3

1995 ◽  
Vol 31 (21) ◽  
pp. 1814-1815 ◽  
Author(s):  
A.T. Findikoglu ◽  
D.W. Reagor ◽  
Q.X. Jia ◽  
X.D. Wu
Keyword(s):  
Thin Films ◽  
Dielectric Thin Films ◽  
Nonlinear Dielectric ◽  
Tunable Microwave

scholarly journals Structural, Optical and Electrical Properties of Al+MoO3 and Au+MoO3 Thin Films Prepared by Magnetron Codeposition

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 766
Author(s):  
Tihomir Car ◽  
Ivan Jakovac ◽  
Ivana Šarić ◽  
Sigrid Bernstorff ◽  
Maja Micetic
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Au Nanoparticle ◽  
Content Increase ◽  
Optical And Electrical Properties ◽  
Volume Percentage ◽  
Sputtering Deposition ◽  
Nanoparticle Formation ◽  
Al Content ◽  
Sputtering Power

Structural, optical and electrical properties of Al+MoO3 and Au+MoO3 thin films prepared by simultaneous magnetron sputtering deposition were investigated. The influence of MoO3 sputtering power on the Al and Au nanoparticle formation and spatial distribution was explored. We demonstrated the formation of spatially arranged Au nanoparticles in the MoO3 matrix, while Al incorporates in the MoO3 matrix without nanoparticle formation. The dependence of the Au nanoparticle size and arrangement on the MoO3 sputtering power was established. The Al-based films show a decrease of overall absorption with an Al content increase, while the Au-based films have the opposite trend. The transport properties of the investigated films also are completely different. The resistivity of the Al-based films increases with the Al content, while it decreases with the Au content increase. The reason is a different transport mechanism that occurs in the films due to their different structural properties. The choice of the incorporated material (Al or Au) and its volume percentage in the MoO3 matrix enables the design of materials with desirable optical and electrical characteristics for a variety of applications.

Sol-gel derived TiNb2 O7 dielectric thin films for transparent electronic applications

2017 ◽  
Vol 101 (2) ◽  
pp. 674-682 ◽  
Author(s):  
Ming-Chuan Chang ◽  
Chieh-Szu Huang ◽  
Yi-Da Ho ◽  
Cheng-Liang Huang
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dielectric Thin Films

Laser evaporation deposition of superconducting and dielectric thin films

1988 ◽  
Vol 52 (21) ◽  
pp. 1825-1827 ◽  
Author(s):  
H. S. Kwok ◽  
P. Mattocks ◽  
L. Shi ◽  
X. W. Wang ◽  
S. Witanachchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Evaporation ◽  
Dielectric Thin Films

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

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