Relationship between hole trapping and interface state generation in metal‐oxide‐silicon structures

S. J. Wang; J. M. Sung; S. A. Lyon

doi:10.1063/1.99690

Relationship between hole trapping and interface state generation in metal‐oxide‐silicon structures

Applied Physics Letters ◽

10.1063/1.99690 ◽

1988 ◽

Vol 52 (17) ◽

pp. 1431-1433 ◽

Cited By ~ 84

Author(s):

S. J. Wang ◽

J. M. Sung ◽

S. A. Lyon

Keyword(s):

Metal Oxide ◽

Interface State ◽

Hole Trapping ◽

State Generation ◽

Silicon Structures ◽

Metal Oxide Silicon

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Dependence of interface-state generation on field polarity in metal-oxide-silicon devices of various thicknesses and technologies

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/32/13/301 ◽

1999 ◽

Vol 32 (13) ◽

pp. 1435-1442 ◽

Cited By ~ 8

Author(s):

A El-Hdiy ◽

Dj Ziane ◽

F Nebel ◽

D Vuillaume ◽

M Jourdain

Keyword(s):

Metal Oxide ◽

Interface State ◽

Field Polarity ◽

Silicon Devices ◽

State Generation ◽

Metal Oxide Silicon

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Paramagnetic trivalent silicon centers in gamma irradiated metal‐oxide‐silicon structures

Applied Physics Letters ◽

10.1063/1.94566 ◽

1984 ◽

Vol 44 (1) ◽

pp. 96-98 ◽

Cited By ~ 92

Author(s):

P. M. Lenahan ◽

P. V. Dressendorfer

Keyword(s):

Metal Oxide ◽

Silicon Structures ◽

Metal Oxide Silicon ◽

Gamma Irradiated

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Electrical characterization of low‐pressure chemical‐vapor‐deposited silicon dioxide metal‐oxide‐silicon structures

Journal of Applied Physics ◽

10.1063/1.353093 ◽

1993 ◽

Vol 73 (5) ◽

pp. 2397-2401 ◽

Cited By ~ 9

Author(s):

S. S. Ang ◽

Y. J. Shi ◽

W. D. Brown

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Electrical Characterization ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Silicon Structures ◽

Metal Oxide Silicon

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Deep trapping of implanted Na+ and Li+ ions near the Si/SiO2 interface in metal-oxide-silicon structures

Solid-State Electronics ◽

10.1016/0038-1101(85)90115-7 ◽

1985 ◽

Vol 28 (5) ◽

pp. 509-516 ◽

Cited By ~ 4

Author(s):

G. Greeuw ◽

J.F. Verwey

Keyword(s):

Metal Oxide ◽

Silicon Structures ◽

Metal Oxide Silicon

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Extra interface state generation enhanced by fluorine in tungsten‐polycided metal‐oxide‐semiconductor devices with nitrided oxide gate dielectric

Applied Physics Letters ◽

10.1063/1.114493 ◽

1995 ◽

Vol 67 (10) ◽

pp. 1456-1458 ◽

Cited By ~ 1

Author(s):

C. W. Chen ◽

Y. K. Fang ◽

G. Y. Lee ◽

J. C. Hsieh ◽

M. S. Liang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation

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Valence band electron tunneling in metal-oxide-silicon structures

Applied Surface Science ◽

10.1016/0169-4332(87)90104-8 ◽

1987 ◽

Vol 30 (1-4) ◽

pp. 298-303 ◽

Cited By ~ 11

Author(s):

A. Modelli

Keyword(s):

Metal Oxide ◽

Valence Band ◽

Electron Tunneling ◽

Band Electron ◽

Silicon Structures ◽

Metal Oxide Silicon ◽

Valence Band Electron

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Irradiation induced pulsations of reverse biased metal oxide/silicon structures

Applied Physics Letters ◽

10.1063/1.2773950 ◽

2007 ◽

Vol 91 (8) ◽

pp. 083512 ◽

Cited By ~ 5

Author(s):

D. Fink ◽

A. Kiv ◽

D. Fuks ◽

M. Tabacnics ◽

M. de A. Rizutto ◽

...

Keyword(s):

Metal Oxide ◽

Silicon Structures ◽

Metal Oxide Silicon

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Gate polarity dependence of impact ionization probabilities in metal-oxide-silicon structures under Fowler–Nordheim stress

Solid-State Electronics ◽

10.1016/s0038-1101(01)00261-1 ◽

2002 ◽

Vol 46 (2) ◽

pp. 279-285 ◽

Cited By ~ 10

Author(s):

Piyas Samanta ◽

C.K. Sarkar

Keyword(s):

Metal Oxide ◽

Impact Ionization ◽

Silicon Structures ◽

Metal Oxide Silicon

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Influence of X-Ray Irradiations on the Charge Distributions in Metal-Oxide-Silicon Structures

The Surface Properties of Oxidized Silicon ◽

10.1007/978-3-662-40210-8_5 ◽

1967 ◽

pp. 81-89

Author(s):

E. Kooi

Keyword(s):

Metal Oxide ◽

X Ray ◽

Charge Distributions ◽

Silicon Structures ◽

Metal Oxide Silicon

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Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

Applied Physics Letters ◽

10.1063/1.102819 ◽

1990 ◽

Vol 56 (3) ◽

pp. 250-252 ◽

Cited By ~ 8

Author(s):

G. Q. Lo ◽

W. C. Ting ◽

D. K. Shih ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

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