scholarly journals Characterization of GaAs film grown on Si substrate by photoluminescence at 77 K

1988 ◽  
Vol 52 (7) ◽  
pp. 579-581 ◽  
Author(s):  
Yihe Huang ◽  
Peter Y. Yu ◽  
Henry Lee ◽  
Shyh Wang
Keyword(s):  
Gaas Film ◽  
Si Substrate

Characterization of the order-annealing response of nanostructured iron-palladium based ferromagnetic thin-films

2001 ◽  
Vol 703 ◽  
Author(s):  
Huiping Xu ◽  
Adam T. Wise ◽  
Timothy J. Klemmer ◽  
Jörg M. K. Wiezorek
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Room Temperature ◽  
Si Substrate ◽  
Ferromagnetic Thin Films ◽  
Precipitation Reactions ◽  
Post Deposition ◽  
Xrd And Tem ◽  
Iron Palladium

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

scholarly journals Growth and characterization of TiO2 nanotubes from sputtered Ti film on Si substrate

2012 ◽  
Vol 7 (1) ◽  
pp. 388 ◽  
Author(s):  
Karumbaiah N Chappanda ◽  
York R Smith ◽  
Swomitra K Mohanty ◽  
Loren W Rieth ◽  
Prashant Tathireddy ◽  
...  
Keyword(s):  
Tio2 Nanotubes ◽  
Si Substrate

MBE Growth and Characterization of SxGe1−x Multilayer Structures on Si (100) for Use as a Substrate for GaAs Heteroepitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
J. B. Posthill ◽  
D. P. Malta ◽  
R. Venkatasubramanian ◽  
P. R. Sharps ◽  
M. L. Timmons ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Lattice Mismatch ◽  
Antiphase Domain ◽  
Multilayer Structures ◽  
Si Substrate ◽  
Mbe Growth ◽  
Etch Pit ◽  
Layer Structures ◽  
Domain Boundaries

ABSTRACTInvestigation has continued into the use of SixGe1−x multilayer structures (MLS) as a buffer layer between a Si substrate and a GaAs epitaxial layer in order to accommodate the 4.1% lattice mismatch. SixGe1−x 4-layer and 5-layer structures terminating in pure Ge have been grown using molecular beam epitaxy. Subsequent GaAs heteroepitaxy has allowed evaluation of these various GaAs/SixGe1−xMLS/Si (100) structures. Antiphase domain boundaries have been eliminated using vicinal Si (100) substrates tilted 6° off-axis toward [011], and the etch pit density in GaAs grown on a 5-layer SixGe1−x MLS on vicinal Si (lOO) was measured to be 106 cm−2.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Structural and electrical characterization of AIN thin films obtained by nitridation of Al/Si substrate

1999 ◽  
Vol 28 (3) ◽  
pp. 225-227 ◽  
Author(s):  
Jipo Huang ◽  
Lianwei Wang ◽  
Qinwo Shen ◽  
Chenglu Lin ◽  
Mikael Östling
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Si Substrate

Optical and Electrical Characterizations of Nanoscale Robust 3C-SiC Membrane for UV Sensing Applications

2018 ◽  
Vol 775 ◽  
pp. 278-282
Author(s):  
A.R.M. Foisal ◽  
T. Dinh ◽  
A. Iacopi ◽  
L. Hold ◽  
E.W. Streed ◽  
...  
Keyword(s):  
Uv Light ◽  
Optical Characterization ◽  
Considerable Change ◽  
Electrical Contacts ◽  
Si Substrate ◽  
Uv Illumination ◽  
Sensing Applications ◽  
Transmission Measurements ◽  
Electrical Characterizations

This paper presents the fabrication and optical characterization of an ultrathin 3C-SiC membrane for UV light detection. SiC nanoscale film was grown on Si substrate and subsequently released to form a robust membrane with a high aspect ratio of about 5000. Transmission measurements were performed to determine the thickness of the film with a high accuracy of 98%. We also employed a simple and highly effective direct wirebonding technique to form electrical contacts to the SiC membrane. The considerable change in the photocurrent of the SiC membrane was observed under UV illumination, indicating the potential of using 3C-SiC membranes for UV detection.

Spectroscopic imaging ellipsometry for characterization of nanofilm pattern on Si substrate

2010 ◽  
Vol 8 (S1) ◽  
pp. 114-118 ◽  
Author(s):  
孟永宏 Yonghong Meng ◽  
陈涉 She Chen ◽  
靳刚 Gang Jin
Keyword(s):  
Spectroscopic Imaging ◽  
Si Substrate ◽  
Imaging Ellipsometry

scholarly journals Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate

ACS Photonics ◽  
2019 ◽  
Vol 6 (5) ◽  
pp. 1100-1105 ◽  
Author(s):  
Jian Huang ◽  
Yating Wan ◽  
Daehwan Jung ◽  
Justin Norman ◽  
Chen Shang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Defect Characterization ◽  
Si Substrate
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