scholarly journals Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate

ACS Photonics ◽  
2019 ◽  
Vol 6 (5) ◽  
pp. 1100-1105 ◽  
Author(s):  
Jian Huang ◽  
Yating Wan ◽  
Daehwan Jung ◽  
Justin Norman ◽  
Chen Shang ◽  
...  
Author(s):  
Jian Huang ◽  
Yating Wan ◽  
Daehwan Jung ◽  
Justin Norman ◽  
Chen Shang ◽  
...  

2021 ◽  
Author(s):  
Fiaz Ahmed ◽  
John Hardin Dunlap ◽  
Perry J. Pellechia ◽  
Andrew Greytak

A highly stable p-type PbS-QDs ink is prepared using a single-step biphasic ligand exchange route, overcoming instability encountered in previous reports. Chemical characterization of the ink reveals 3-mercaptopriopionic acid (MPA)...


2020 ◽  
Author(s):  
Rishibrind Kumar Upadhyay ◽  
Abhinav Pratap Singh ◽  
Deepchandra Upadhyay ◽  
Amit Kumar ◽  
Satyabrata Jit

2001 ◽  
Vol 703 ◽  
Author(s):  
Huiping Xu ◽  
Adam T. Wise ◽  
Timothy J. Klemmer ◽  
Jörg M. K. Wiezorek

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.


2007 ◽  
Vol 4 (10) ◽  
pp. 3659-3663 ◽  
Author(s):  
S. Neretina ◽  
D. Grebennikov ◽  
R. A. Hughes ◽  
M. Weber ◽  
K. G. Lynn ◽  
...  

1997 ◽  
Vol 306 (2) ◽  
pp. 198-204 ◽  
Author(s):  
A.A. Darhuber ◽  
J. Stangl ◽  
V. Holy ◽  
G. Bauer ◽  
A. Krost ◽  
...  

2013 ◽  
Vol 330 ◽  
pp. 504-509
Author(s):  
Yang Zheng ◽  
Jin Jie Zhou ◽  
Hui Zheng

Although many imaging algorithms such as ellipse and hyperbola algorithm can roughly locate defects in large plate-like structures with sparse guided wave arrays, quantitative characterization of them is still a challenging problem, especially for those small defects known as subwavelength defects. Scattering signals of defects contain abundant information so that can be used to evaluate defects. A defects recognition method using the S-matrix (scattering matrix) was presented. S-matrices of hole and crack with S0 mode incident were experimentally measured. The results show that defects can be recognized from the morphology of 2D S-matrix chart. This method has great potential to achieve more specific parameters of small defects with sparse guided wave arrays.


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