Publisher's Note: “Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates” [J. Appl. Phys. 100, 023537 (2006)]

2006 ◽  
Vol 100 (12) ◽  
pp. 129901
Author(s):  
R. L. Peterson ◽  
K. D. Hobart ◽  
H. Yin ◽  
F. J. Kub ◽  
J. C. Sturm
Keyword(s):  
Tensile Strain ◽  
Silicon On Insulator ◽  
Uniaxial Tensile ◽  
Large Area ◽  
Compliant Substrates

Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates

2006 ◽  
Vol 100 (2) ◽  
pp. 023537 ◽  
Author(s):  
R. L. Peterson ◽  
K. D. Hobart ◽  
H. Yin ◽  
F. J. Kub ◽  
J. C. Sturm
Keyword(s):  
Tensile Strain ◽  
Silicon On Insulator ◽  
Uniaxial Tensile ◽  
Large Area ◽  
Compliant Substrates

GeSn Lasers with Uniaxial Tensile Strain in the Gain Medium

2019 ◽  
Author(s):  
Mathieu Bertrand ◽  
Francesco Armand Pilon ◽  
Vincent Reboud ◽  
Hans Sigg ◽  
Quang-Minh Thai ◽  
...  
Keyword(s):  
Tensile Strain ◽  
Gain Medium ◽  
Uniaxial Tensile

Required Linepipe Properties for High Strain Applications and Possible Resolution by Pipe Manufacturing Technology

2008 ◽  
Author(s):  
Hitoshi Asahi ◽  
Eiji Tsuru
Keyword(s):  
Tensile Strain ◽  
Compressive Strain ◽  
Bending Moment ◽  
Uniaxial Tensile ◽  
Buckling Behavior ◽  
Strain Limit ◽  
Bent Pipe ◽  
Uniaxial Tensile Stress ◽  
The Relationship ◽  
Pipe Manufacturing

Application of strain based design to pipelines in arctic or seismic areas has recently been recognized as important. So far, there has been much study performed on tensile strain limit and compressive strain limit. However, the relationship between bending buckling (compressive strain limit) and tensile strain limit has not been discussed. A model using actual stress strain curves suggests that the tensile strain limit increases as Y/T rises under uniaxial tensile stress because a pipe manufacturer usually raises TS instead of lowering YS to achieve low Y/T. Under bending of a pipe with a high D/t, an increase in compressive strain on intrados of a bent pipe at the maximum bending moment (ε-cp*) improves the tensile strain limit because the tensile strain limit is controlled by the onset of buckling or ε-cp* which is increased by lowering Y/T. On the other hand, under bending of a pipe with a low D/t, the tensile strain limit may not be influenced by improvement of buckling behavior because tensile strain on the extrados is already larger than the tensile limit at ε-cp*. Finally, we argue that the balance of major linepipe properties is important. Efforts other than the strict demands for pipe properties are also very important and inevitable to improve the strain capacity of a pipeline.

Cellular Strain Assessment Tool (CSAT): Precision Controlled Cyclic Uniaxial Tensile Loading

2009 ◽  
Author(s):  
Yu Ching Yung ◽  
Herman Vandenburgh ◽  
David J. Mooney
Keyword(s):  
Endothelial Cells ◽  
Tensile Strain ◽  
Assessment Tool ◽  
Umbilical Vein ◽  
Uniaxial Strain ◽  
Bottom Surface ◽  
Uniaxial Tensile ◽  
Mechanical Stimuli ◽  
Cyclic Tensile Strain ◽  
Application Range

Cells throughout our body are exposed to various forms of mechanical stimuli[1, 2]. To examine effects of mechanical cyclic strain on vascular cells, several types of strain devices have been developed, and the methods of force application range from use of dynamic indenters[3] to vacuum pressures (both positive[4] or negative[5, 6]) to stretch the bottom surface of the elastic substrate to which the cells are cultured. A number of custom uniaxial strain devices have been developed to examine cells that are normally exposed to lateral stresses[7–11]. However, a limitation to most uniaxial strain devices is that they can only accommodate a limited number of samples[8–12] at one time. Most devices also lack a platform to perform consistent clamping and loading of samples, which can significantly alter substrate strain[8, 9, 13] and ultimately, introduce large variations between experiments. Here we present a computer controlled precision strain application system composed of a custom multi-well uniaxial Cellular Strain Assessment Tool (CSAT) (Figure 1), a microscope adaptable mini CSAT, and custom elastomeric polydimethylsiloxane (PDMS) plates. The effect of cyclic tensile strain on the migration of endothelial cells was also analyzed in this study. Human umbilical vein endothelial cells (HUVECs), cultured in 2D directly on elastomeric polydimethylsiloxane (PDMS) substrates were exposed to cyclic tensile strain at physiologic levels, and demonstrated to enhance EC migration.

GeSn Lasers with Uniaxial Tensile Strain in the Gain Medium

2019 ◽  
Author(s):  
Jeremie Chretien ◽  
Alexei Chelnokov ◽  
Vincent Reboud ◽  
Jean-Michel Hartmann ◽  
Vincent Calvo ◽  
...  
Keyword(s):  
Tensile Strain ◽  
Gain Medium ◽  
Uniaxial Tensile

scholarly journals Large-Area Resonance-Tuned Metasurfaces for On-Demand Enhanced Spectroscopy

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Masanobu Iwanaga ◽  
Bongseok Choi ◽  
Hideki T. Miyazaki ◽  
Yoshimasa Sugimoto ◽  
Kazuaki Sakoda
Keyword(s):  
Nanoimprint Lithography ◽  
Near Infrared ◽  
Cost Effective ◽  
Silicon On Insulator ◽  
Fine Tuning ◽  
Infrared Range ◽  
Large Area ◽  
Optical Resonance ◽  
Optical Resonances ◽  
Soi Substrates

We show an effective procedure for lateral structure tuning in nanoimprint lithography (NIL) that has been developed as a vertical top-down method fabricating large-area nanopatterns. The procedure was applied to optical resonance tuning in stacked complementary (SC) metasurfaces based on silicon-on-insulator (SOI) substrates and was found to realize structure tuning at nm precision using only one mold in the NIL process. The structure tuning enabled us to obtain fine tuning of the optical resonances, offering cost-effective, high-throughput, and high-precision nanofabrication. We also demonstrate that the tuned optical resonances selectively and significantly enhance fluorescence (FL) of dye molecules in a near-infrared range. FL intensity on a SC metasurface was found to be more than 450-fold larger than the FL intensity on flat Au film on base SOI substrate.

Mutual influence of uniaxial tensile strain and point defect pattern on electronic states in graphene

2017 ◽  
Vol 90 (6) ◽  
Author(s):  
Iyor Yu. Sagalianov ◽  
Taras M. Radchenko ◽  
Yuriy I. Prylutskyy ◽  
Valentyn A. Tatarenko ◽  
Pawel Szroeder
Keyword(s):  
Point Defect ◽  
Tensile Strain ◽  
Mutual Influence ◽  
Electronic States ◽  
Uniaxial Tensile ◽  
Defect Pattern

scholarly journals Development of an elastic cell culture substrate for a novel uniaxial tensile strain bioreactor

2013 ◽  
Vol 102 (7) ◽  
pp. 2356-2364 ◽  
Author(s):  
Matthew D. Moles ◽  
Colin A. Scotchford ◽  
Alastair Campbell Ritchie
Keyword(s):  
Cell Culture ◽  
Tensile Strain ◽  
Uniaxial Tensile ◽  
Culture Substrate ◽  
Cell Culture Substrate
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