Short‐wavelength (∼625 nm) room‐temperature continuous laser operation of In0.5(AlxGa1−x)0.5P quantum well heterostructures

1988 ◽  
Vol 52 (16) ◽  
pp. 1329-1331 ◽  
Author(s):  
D. W. Nam ◽  
D. G. Deppe ◽  
N. Holonyak ◽  
R. M. Fletcher ◽  
C. P. Kuo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Short Wavelength ◽  
Room Temperature ◽  
Laser Operation ◽  
Continuous Laser

Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector

2013 ◽  
Vol 102 (16) ◽  
pp. 161107 ◽  
Author(s):  
Arvind P. Ravikumar ◽  
Guopeng Chen ◽  
Kuaile Zhao ◽  
Yue Tian ◽  
Paul Prucnal ◽  
...  
Keyword(s):  
Quantum Well ◽  
Short Wavelength ◽  
Room Temperature ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
High Responsivity

Low‐threshold continuous laser operation (300–337 °K) of multilayer MO‐CVD AlxGa1−xAs‐GaAs quantum‐well heterostructures

1978 ◽  
Vol 33 (8) ◽  
pp. 737-739 ◽  
Author(s):  
N. Holonyak ◽  
R. M. Kolbas ◽  
W. D. Laidig ◽  
B. A. Vojak ◽  
R. D. Dupuis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Operation ◽  
Continuous Laser ◽  
Low Threshold

VB-6 continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si

1987 ◽  
Vol 34 (11) ◽  
pp. 2380-2380
Author(s):  
D.G. Deppe ◽  
N. Holonyak ◽  
D.W. Nam ◽  
K.C. Hsieh ◽  
R.W. Kaliski ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Laser Operation
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