Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures

1987 ◽  
Vol 51 (13) ◽  
pp. 1004-1006 ◽  
Author(s):  
I. J. Fritz ◽  
P. L. Gourley ◽  
L. R. Dawson
Keyword(s):  
Quantum Well ◽  
Layer Thickness ◽  
Critical Layer ◽  
Critical Layer Thickness ◽  
Quantum Well Structures ◽  
Strained Quantum Well

Theory of Critical Layer Thickness of Nonconstant Quantum-Well Width Produced by Interdiffusion and its Optoelectronics Consequence

1997 ◽  
Vol 484 ◽  
Author(s):  
Michael C. Y. Chan ◽  
E. Herbert Li
Keyword(s):  
Quantum Well ◽  
Plane Strain ◽  
Layer Thickness ◽  
Diffusion Length ◽  
Critical Layer ◽  
Critical Layer Thickness ◽  
Interdiffusion Process ◽  
Quantum Well Width ◽  
Lattice Matched

AbstractIn this paper, the concept of critical layer thickness is applied to the interdiffused quantum well (DFQW) structure. For the as-grown InGaAs/LnP lattice matched quantum well, the interdiffusion process will induce in-plane strain into the DFQW forming a lattice mismatched system. The relation between the as-grown well width (Lz) and the diffusion length (Ld) for formation of dislocation is presented.

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

1.3 μm luminescence in (InAs) n /(GaAs) n strained quantum-well structures grown on GaAs

2020 ◽  
pp. 577-630
Author(s):  
E. J. Roan ◽  
K. Y. Cheng ◽  
P. J. Pearah ◽  
X. Liu ◽  
K. C. Hsieh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well
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