Activation energy for thermal donor formation in silicon

1987 ◽  
Vol 51 (26) ◽  
pp. 2197-2199 ◽  
Author(s):  
M. Claybourn ◽  
R. C. Newman
Keyword(s):  
Activation Energy ◽  
Thermal Donor ◽  
Donor Formation

On the Question of Oxygen Diffusion During Oxygen Related Thermal Donor Formation In Silicon.

1986 ◽  
Vol 71 ◽  
Author(s):  
G. S. Oehrlein ◽  
T. Y. Tan ◽  
R. L. Kleinhenz ◽  
J. L. Lindstrom
Keyword(s):  
Heat Treatment ◽  
Activation Energy ◽  
Oxygen Content ◽  
Oxygen Diffusion ◽  
Heat Treatments ◽  
The Other ◽  
Interstitial Oxygen ◽  
Thermal Donor ◽  
Oxygen Diffusivity ◽  
Donor Formation

In an attempt to decide the question whether enhanced oxygen diffusion is important for heat-treatments of silicon at ∼450ºC where thermal donors are formed we have conducted two types of experiments aimed at providing a measure of the “effective” oxygen diffusivity. First, we have extensively measured the temperature dependence of the thermal donor introduction rate for very short heat treatment times (20min). This measurement provides the thermal activation energy of TD formation. Since effects of long range diffusion and formation of large oxygen clusters are negligible for suchtimes and temperatures and, presumably, thermal donor formation at the lowest heat treatment temperatures is oxygen diffusion limited, it should be possible to interprete the obtained activation energy in terms of oxygen diffusivity. The change of the interstitialoxygen content is immeasureable for 20min heat treatment times. Therefore, the decay of the interstitial oxygen content was measured for longer heat treatments at 450ºC (up to 500hours). The two experiments are complementary in several ways: In one experiment the oxygen diffusion activation energy is extracted, while the other measurement provides the value of the diffusion coefficient at a given temperature. In one case thermal donors are monitored for short heat treatment times while in the other experiment the interstitial oxygen content is measured for long heat treatment times. The present measurements are different from other diffusion experiments in this temperature range where theatomic jump of isolated oxygen is monitored [1]. Here we attempt to extract an effective oxygen diffusivity under conditions of thermal donor formation since the thermal donor formation process itself might be the cause of an enhanced oxygen diffusivity.

"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress

2005 ◽  
Vol 108-109 ◽  
pp. 181-186 ◽  
Author(s):  
Valentin V. Emtsev ◽  
Boris A. Andreev ◽  
Gagik A. Oganesyan ◽  
D.I. Kryzhkov ◽  
Andrzej Misiuk ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Compressive Stress ◽  
Reference Temperature ◽  
Enhancement Effect ◽  
Shallow Acceptor ◽  
Thermal Donor ◽  
Compressive Stresses ◽  
Heat Treated ◽  
Donor Formation ◽  
New Donors

Effects of compressive stress on oxygen agglomeration processes in Czochralski grown silicon heat treated at T= 450OC, used as a reference temperature, and T= 600OC to 800OC are investigated in some detail. Compressive stresses of about P= 1 GPa lead to enhanced formation of Thermal Double Donors in materials annealed over a temperature range of T= 450OC – 600OC. It has been shown that the formation of thermal donors at T= 450OC under normal conditions and compressive stress is accompanied with loss of substitutional boron. In contrast, the concentration of the shallow acceptor states of substitutional boron in silicon annealed under stress at T≥ 600OC remains constant. An enhancement effect of thermal donor formation is gradually weakened at T≥ 700OC. The oxygen diffusivity sensitive to mechanical stress is believed to be responsible for the observed effects in heat-treated silicon.

The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C

1993 ◽  
Vol 143-147 ◽  
pp. 963-968 ◽  
Author(s):  
S.A. McQuaid ◽  
Charalamos A. Londos ◽  
M.J. Binns ◽  
R.C. Newman ◽  
J.H. Tucker
Keyword(s):  
Oxygen Loss ◽  
Thermal Donor ◽  
Donor Formation ◽  
Kinetics Of

Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 57-58 ◽  
pp. 189-196 ◽  
Author(s):  
Alexander G. Ulyashin ◽  
Yu.A. Bumay ◽  
Reinhart Job ◽  
G. Grabosch ◽  
D. Borchert ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hydrogen Plasma ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation

2020 ◽  
pp. 2000587
Author(s):  
Rabin Basnet ◽  
Hang Sio ◽  
Manjula Siriwardhana ◽  
Fiacre E. Rougieux ◽  
Daniel Macdonald
Keyword(s):  
Defect Formation ◽  
Silicon Wafers ◽  
Thermal Donor ◽  
Donor Formation

Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen

1999 ◽  
Vol 85 (12) ◽  
pp. 8054-8059 ◽  
Author(s):  
D. Åberg ◽  
M. K. Linnarsson ◽  
B. G. Svensson ◽  
T. Hallberg ◽  
J. L. Lindström
Keyword(s):  
Thermal Donor ◽  
Ambient Oxygen ◽  
Donor Formation

Thermal donor formation in electron‐irradiated Czochralski silicon

1986 ◽  
Vol 49 (21) ◽  
pp. 1435-1437 ◽  
Author(s):  
Johan Svensson ◽  
Bengt G. Svensson ◽  
J. Lennart Lindström
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation
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