Heteroepitaxial growth of Cd1−xMnxTe on GaAs by metalorganic chemical vapor deposition

Akbar Nouhi; Richard J. Stirn

doi:10.1063/1.98927

Heteroepitaxial growth of Cd1−xMnxTe on GaAs by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.98927 ◽

1987 ◽

Vol 51 (26) ◽

pp. 2251-2253 ◽

Cited By ~ 31

Author(s):

Akbar Nouhi ◽

Richard J. Stirn

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

Metalorganic Chemical

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Heteroepitaxial growth of KNbO3 single‐crystal films on SrTiO3 by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.117360 ◽

1996 ◽

Vol 69 (2) ◽

pp. 167-169 ◽

Cited By ~ 28

Author(s):

Atsushi Onoe ◽

Ayako Yoshida ◽

Kiyofumi Chikuma

Keyword(s):

Chemical Vapor Deposition ◽

Single Crystal ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

Single Crystal Films ◽

Crystal Films ◽

Metalorganic Chemical

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Heteroepitaxial growth of HgTe on InSb at 200 °C by metalorganic chemical vapor deposition using ditertiarybutyltelluride

Journal of Applied Physics ◽

10.1063/1.342913 ◽

1989 ◽

Vol 65 (4) ◽

pp. 1808-1810 ◽

Cited By ~ 1

Author(s):

Shunri Oda ◽

Yuko Tanaka ◽

Osamu Sugiura ◽

Masakiyo Matsumura

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

Metalorganic Chemical

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Low‐temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.99829 ◽

1988 ◽

Vol 53 (9) ◽

pp. 773-775 ◽

Cited By ~ 10

Author(s):

J. C. Chen ◽

P. Bush ◽

W. K. Chen ◽

Pao‐Lo Liu

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

Metalorganic Chemical

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Low temperature cleaning of Si by a H2/AsH3 plasma prior to heteroepitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD)

Journal of Electronic Materials ◽

10.1007/bf02651294 ◽

1990 ◽

Vol 19 (4) ◽

pp. 337-343 ◽

Cited By ~ 3

Author(s):

Euijoon Yoon ◽

Patrice Parris ◽

Rafael Reif

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

Metalorganic Chemical

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Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.97728 ◽

1987 ◽

Vol 50 (24) ◽

pp. 1725-1726 ◽

Cited By ~ 41

Author(s):

M. K. Lee ◽

D. S. Wuu ◽

H. H. Tung

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Heteroepitaxial Growth ◽

Metalorganic Chemical

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Heteroepitaxial Growth of MgO Thin Films on Al2O3(0001) by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.6919 ◽

2002 ◽

Vol 41 (Part 1, No. 11B) ◽

pp. 6919-6921 ◽

Cited By ~ 9

Author(s):

Won Il Park ◽

Dong-Hyuk Kim ◽

Gyu-Chul Yi ◽

Chinkyo Kim

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

Metalorganic Chemical

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Initial stage of GaPSi heteroepitaxial growth by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(95)01046-7 ◽

1996 ◽

Vol 163 (1-2) ◽

pp. 165-170 ◽

Cited By ~ 19

Author(s):

Tetsuo Soga ◽

Takashi Jimbo ◽

Masayoshi Umeno

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

Initial Stage ◽

Metalorganic Chemical

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Heteroepitaxial growth of CdTe on InSb by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.98620 ◽

1987 ◽

Vol 51 (19) ◽

pp. 1515-1517 ◽

Cited By ~ 3

Author(s):

O. Sugiura ◽

Y. Tanaka ◽

K. Shiina ◽

M. Matsumura

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

Metalorganic Chemical

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Heteroepitaxial growth of InP on GaAs by low‐pressure metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.339321 ◽

1987 ◽

Vol 62 (8) ◽

pp. 3209-3211 ◽

Cited By ~ 37

Author(s):

M. K. Lee ◽

D. S. Wuu ◽

H. H. Tung

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Heteroepitaxial Growth ◽

Metalorganic Chemical

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Principles and Applications of Metalorganic Chemical Vapor Deposition for the Growth of ih-V Compounds on Si Substrates

MRS Proceedings ◽

10.1557/proc-116-15 ◽

1988 ◽

Vol 116 ◽

Author(s):

Russell D. Dupuis

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

High Quality ◽

Si Substrates ◽

Heteroepitaxial Layers ◽

Metalorganic Chemical

AbstractThe use of the metalorganic chemical vapor deposition thin film materials technology in the heteroepitaxial growth of GaAs on Si substrates is of increasing interest for a wide variety of applications. This paper will describe the principles and applications of this materials technology and discuss possible future approaches to the growth of high-quality HI-V heteroepitaxial layers on Si substrates.

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