Low temperature cleaning of Si by a H2/AsH3 plasma prior to heteroepitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD)
1990 ◽
Vol 19
(4)
◽
pp. 337-343
◽
1990 ◽
pp. 217-222
1989 ◽
Vol 24
(2)
◽
pp. 213-219
◽
1998 ◽
Vol 21
(1-4)
◽
pp. 355-366
◽
2001 ◽
Vol 40
(Part 1, No. 5A)
◽
pp. 3337-3342
◽