Low temperature cleaning of Si by a H2/AsH3 plasma prior to heteroepitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD)

1990 ◽  
Vol 19 (4) ◽  
pp. 337-343 ◽  
Author(s):  
Euijoon Yoon ◽  
Patrice Parris ◽  
Rafael Reif
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