Heteroepitaxial growth of HgTe on InSb at 200 °C by metalorganic chemical vapor deposition using ditertiarybutyltelluride

1989 ◽  
Vol 65 (4) ◽  
pp. 1808-1810 ◽  
Author(s):  
Shunri Oda ◽  
Yuko Tanaka ◽  
Osamu Sugiura ◽  
Masakiyo Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Metalorganic Chemical

Principles and Applications of Metalorganic Chemical Vapor Deposition for the Growth of ih-V Compounds on Si Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
Russell D. Dupuis
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
Si Substrates ◽  
Heteroepitaxial Layers ◽  
Metalorganic Chemical

AbstractThe use of the metalorganic chemical vapor deposition thin film materials technology in the heteroepitaxial growth of GaAs on Si substrates is of increasing interest for a wide variety of applications. This paper will describe the principles and applications of this materials technology and discuss possible future approaches to the growth of high-quality HI-V heteroepitaxial layers on Si substrates.

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