Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy

1987 ◽  
Vol 51 (10) ◽  
pp. 752-754 ◽  
Author(s):  
T. G. Andersson ◽  
Z. G. Chen ◽  
V. D. Kulakovskii ◽  
A. Uddin ◽  
J. T. Vallin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Critical Layer ◽  
Critical Layer Thickness

Critical layer thickness of In0.82Ga0.18As/InP quantum wells

1992 ◽  
Vol 120 (1-4) ◽  
pp. 353-356 ◽  
Author(s):  
A. Le Corre ◽  
S. Durel ◽  
F. Clérot ◽  
B. Lambert ◽  
A. Poudoulec ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Critical Layer ◽  
Critical Layer Thickness

Insitumeasurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substrates

1989 ◽  
Vol 55 (16) ◽  
pp. 1659-1661 ◽  
Author(s):  
B. Elman ◽  
Emil S. Koteles ◽  
P. Melman ◽  
C. Jagannath ◽  
Johnson Lee ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Critical Layer ◽  
Optical Studies ◽  
Critical Layer Thickness ◽  
Gaas Substrates
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