Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing

1986 ◽  
Vol 49 (13) ◽  
pp. 815-817 ◽  
Author(s):  
N. Chand ◽  
R. People ◽  
F. A. Baiocchi ◽  
K. W. Wecht ◽  
A. Y. Cho
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Crystalline Quality ◽  
Gaas On Si

Comparison of the GaAs Layers Grown on Porous Si and on Si by Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
B.J. Wu ◽  
K.L. Wang ◽  
Y.J. Mii ◽  
Y.S. Yoon ◽  
A.T. Wu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates

AbstractGaAs layers have been successfully grown on tilted (100) Si as well as porous Si substrates by molecular beam epitaxy(MBE). Rapid thermal annealing and vacuum thermal annealing have been used to further improve the quality of the epitaxial layers. We observed that the dislocation density near the interface of the heterostructure is higher for GaAs on Si substrate. Both annealing processes are proven to be useful in improving layer quality, while the vacuum thermal annealing seemed to be more effective in minimizing the residual stress.

MBE Growth of an Epitaxial Insulator-Metal-Semiconductor Structure: CaF2/CoSi2/Si(111)

1985 ◽  
Vol 54 ◽  
Author(s):  
Julia M. Phillips ◽  
W. M. Augustyniak
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Semiconductor Structure ◽  
Mbe Growth

ABSTRACTWe report the first successful growth of an epitaxial insulator-metal-semiconductor structure. A layer of metallic CoSi2, followed by a layer of insulating CaF2 have been grown by molecular beam epitaxy on Si(111). The epitaxial quality of the CaF2 layer improves upon rapid thermal annealing, while the already excellent crystallinity of the CoSi2 layer is unaffected. The lattice of the CoSi2 is rotated 180° with respect to the Si lattice while the CaF2 lattice is aligned with the Si lattice.

Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealing

1987 ◽  
Vol 51 (13) ◽  
pp. 1013-1015 ◽  
Author(s):  
N. Chand ◽  
R. Fischer ◽  
A. M. Sergent ◽  
D. V. Lang ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Gaas On Si

Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy

1989 ◽  
Vol 54 (26) ◽  
pp. 2695-2697 ◽  
Author(s):  
Henry P. Lee ◽  
Xiaoming Liu ◽  
Shyh Wang ◽  
Thomas George ◽  
Eicke R. Weber
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Crystalline Quality ◽  
Gaas On Si ◽  
Si Films

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

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