Optical properties of triplet states of excitons bound to interstitial-carbon interstitial-oxygen defects in silicon

2011 ◽  
Vol 84 (11) ◽  
Author(s):  
T. Ishikawa ◽  
K. Koga ◽  
T. Itahashi ◽  
K. M. Itoh ◽  
L. S. Vlasenko
Keyword(s):  
Optical Properties ◽  
Triplet States ◽  
Interstitial Oxygen ◽  
Interstitial Carbon ◽  
Oxygen Defects ◽  
Carbon Interstitial

Identification of An Interstitial Carbon – Interstitial oxygen Complex in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Trombetta ◽  
G. D. Watkins
Keyword(s):  
Carbon Atom ◽  
Oxygen Atom ◽  
Lattice Relaxation ◽  
Luminescence Spectra ◽  
Interstitial Oxygen ◽  
Epr Spectrum ◽  
Interstitial Carbon ◽  
Oxygen Complex ◽  
Interaction Tensor ◽  
Carbon Interstitial

ABSTRACTThe Si-G15 EPR spectrum and the 0.79eV “C-line” luminescence spectra in silicon are shown to arise from an interstitial carbon - interstitial oxygen complex. The g-tensor and 13C hyperfine interaction tensor indicate the structure in the vicinity of the carbon atom while stress alignment studies reveal the configuration near the oxygen atom. The pairing of the two impurities leads to a lattice relaxation which serves to stabilize the complex against dissociation.

DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 155-160 ◽  
Author(s):  
L.F. Makarenko ◽  
F.P. Korshunov ◽  
Stanislav B. Lastovskii ◽  
L.I. Murin ◽  
Michael Moll
Keyword(s):  
Energy Level ◽  
Crystallographic Orientation ◽  
Room Temperature ◽  
Interstitial Oxygen ◽  
Transformation Kinetics ◽  
Interstitial Carbon ◽  
Oxygen Complex ◽  
Carbon Interstitial ◽  
P Type ◽  
Kinetics Of

DLTS studies of transformation kinetics of different carbon–related complexes in electron irradiated n- and p-type silicon have been performed. It has been found that silicon self-interstitials have very low mobility even at room temperature in p-Si, but become extremely mobile under elec-tron injection. It is shown that upon annealing of interstitial carbon in p-Si a metastable state for interstitial carbon-interstitial oxygen complex is formed. This state has an energy level of about Еv+0.36 eV. The formation of the stable and metastable states takes place concurrently. The observed features of the carbon-related complexes formation are likely related to the existence of different crystallographic orientation of the equiprobable pathways through which the interstitial carbon and oxygen atoms can approach each other.

Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4552-4554
Author(s):  
T. Ishikawa ◽  
K. Koga ◽  
T. Itahashi ◽  
L.S. Vlasenko ◽  
K.M. Itoh
Keyword(s):  
Triplet States ◽  
Interstitial Carbon ◽  
Oxygen Defects

Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4552-4554 ◽  
Author(s):  
T. Ishikawa ◽  
K. Koga ◽  
T. Itahashi ◽  
L.S. Vlasenko ◽  
K.M. Itoh
Keyword(s):  
Triplet States ◽  
Interstitial Carbon ◽  
Oxygen Defects

Free-to-bound emission from interstitial carbon and oxygen defects (CiOi) in electron-irradiated Si

2021 ◽  
Vol 14 (1) ◽  
pp. 011006
Author(s):  
Michio Tajima ◽  
Shota Asahara ◽  
Yuta Satake ◽  
Atsushi Ogura
Keyword(s):  
Interstitial Carbon ◽  
Oxygen Defects

EXAFS evidence of interstitial oxygen defects in Nd2CuO4+δ

1995 ◽  
Vol 246 (3-4) ◽  
pp. 345-350 ◽  
Author(s):  
P. Ghigna ◽  
G. Spinolo ◽  
A. Filipponi ◽  
A.V. Chadwick ◽  
P. Hanmer
Keyword(s):  
Interstitial Oxygen ◽  
Oxygen Defects

A Comprehensive Model for Carbon Suppression of Boron Transient Enhanced Diffusion

2001 ◽  
Vol 669 ◽  
Author(s):  
Julie L. Ngau ◽  
Peter B. Griffin ◽  
James D. Plummer
Keyword(s):  
Point Defect ◽  
Recent Work ◽  
Comprehensive Model ◽  
Pairing Mechanism ◽  
Diffusion Behavior ◽  
Interstitial Carbon ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Single Temperature ◽  
Carbon Interstitial

ABSTRACTIn this work, the time evolution of B transient enhanced diffusion (TED) suppression due to the incorporation of 0.018% substitutional carbon in silicon was studied. The combination of having low C concentrations, which reduce B TED without completely eliminating it, and having diffused B profiles for several times at a single temperature provides much data upon which various models for the suppression of B TED can be tested. Recent work in the literature has indicated that the suppression of B TED in C-rich Si is caused by non-equilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank-Turnbull reactions. Attempts to model our data with these two reactions revealed that the time evolved diffusion behavior of B was not accurately simulated and that an additional reaction that further reduces the Si self-inter- stitial concentration was necessary. In this work, we incorporate a carbon interstitial, carbon substitutional (CiCs) pairing mechanism into a comprehensive model that includes the C kick-out reaction, C Frank-Turnbull reaction, {311} defects, and boron interstitial clusters (BICs) and demonstrate that this model successfully simulates C suppression of B TED at 750 °C for anneal times ranging from 10 s to 60 min.

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