AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio

1987 ◽  
Vol 51 (2) ◽  
pp. 121-123 ◽  
Author(s):  
C. I. Huang ◽  
M. J. Paulus ◽  
C. A. Bozada ◽  
S. C. Dudley ◽  
K. R. Evans ◽  
...  
Keyword(s):  
High Peak ◽  
Current Ratio ◽  
Double Barrier

High peak-to-valley current ratio AlGaAs/AlAs/GaAs double barrier resonant tunnelling diodes

1990 ◽  
Vol 26 (21) ◽  
pp. 1742 ◽  
Author(s):  
V.K. Reddy ◽  
A.J. Tsao ◽  
D.P. Neikirk
Keyword(s):  
High Peak ◽  
Current Ratio ◽  
Double Barrier ◽  
Resonant Tunnelling

scholarly journals SiGe double barrier resonant tunneling diodes on bulk SiGe substrates with high peak-to-valley current ratio

2007 ◽  
Vol 91 (3) ◽  
pp. 032104 ◽  
Author(s):  
S. Tsujino ◽  
N. Usami ◽  
A. Weber ◽  
G. Mussler ◽  
V. Shushunova ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
High Peak ◽  
Resonant Tunneling Diodes ◽  
Current Ratio ◽  
Double Barrier ◽  
Tunneling Diodes ◽  
Double Barrier Resonant Tunneling

Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

2000 ◽  
Vol 21 (4) ◽  
pp. 146-148 ◽  
Author(s):  
Yan-Kuin Su ◽  
Jia-Rong Chang ◽  
Yan-Ten Lu ◽  
Chuing-Liang Lin ◽  
Kuo-Ming Wu ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Room Temperature ◽  
Resonant Tunneling Diode ◽  
High Peak ◽  
Current Ratio ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Double Barrier Resonant Tunneling

Study on Opto-Electronic Integration of Resonant Tunnelling Diodes

2007 ◽  
Vol 121-123 ◽  
pp. 533-536
Author(s):  
Ping Juan Niu ◽  
Hai Rong Hu ◽  
Hong Wei Liu ◽  
Wen Xin Wang ◽  
Xun Zhong Shang
Keyword(s):  
Technological Process ◽  
Integrated Circuit ◽  
Circuit Simulation ◽  
High Peak ◽  
Material Structure ◽  
Current Ratio ◽  
Good Characteristic ◽  
Resonant Tunnelling ◽  
Electronic Integration

We designed the monolithic opto-electronic integrated circuit composed by Resonant Tunnelling Diodes (RTD) and Heterojunction Phototransistor (HPT). Circuit simulation of RTD and HPT integration is firstly processed. The material structure and technological process of the device is introduced in detail. A good characteristic is obtained with high Peak-to-valley current ratio.

Temperature Effects On AlGaAs/GaAs Double Barrier Diodes With High Peak-to-Valley Current Ratios

2005 ◽  
Author(s):  
C.I. Huang ◽  
K. lkossi-Anastasiou ◽  
M.J. Paulus ◽  
C.A. Bozada ◽  
C.E. Stutz ◽  
...  
Keyword(s):  
Temperature Effects ◽  
High Peak ◽  
Double Barrier

Demonstration of high peak‐to‐valley current ratio in anN‐p‐nAlGaAs/GaAs structure

1993 ◽  
Vol 73 (11) ◽  
pp. 7990-7992 ◽  
Author(s):  
Y. H. Wang ◽  
H. C. Wei ◽  
M. P. Houng
Keyword(s):  
High Peak ◽  
Current Ratio ◽  
Gaas Structure
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