Demonstration of high peak‐to‐valley current ratio in anN‐p‐nAlGaAs/GaAs structure

1993 ◽  
Vol 73 (11) ◽  
pp. 7990-7992 ◽  
Author(s):  
Y. H. Wang ◽  
H. C. Wei ◽  
M. P. Houng
Keyword(s):  
High Peak ◽  
Current Ratio ◽  
Gaas Structure

Study on Opto-Electronic Integration of Resonant Tunnelling Diodes

2007 ◽  
Vol 121-123 ◽  
pp. 533-536
Author(s):  
Ping Juan Niu ◽  
Hai Rong Hu ◽  
Hong Wei Liu ◽  
Wen Xin Wang ◽  
Xun Zhong Shang
Keyword(s):  
Technological Process ◽  
Integrated Circuit ◽  
Circuit Simulation ◽  
High Peak ◽  
Material Structure ◽  
Current Ratio ◽  
Good Characteristic ◽  
Resonant Tunnelling ◽  
Electronic Integration

We designed the monolithic opto-electronic integrated circuit composed by Resonant Tunnelling Diodes (RTD) and Heterojunction Phototransistor (HPT). Circuit simulation of RTD and HPT integration is firstly processed. The material structure and technological process of the device is introduced in detail. A good characteristic is obtained with high Peak-to-valley current ratio.

High peak-to-valley current ratio AlGaAs/AlAs/GaAs double barrier resonant tunnelling diodes

1990 ◽  
Vol 26 (21) ◽  
pp. 1742 ◽  
Author(s):  
V.K. Reddy ◽  
A.J. Tsao ◽  
D.P. Neikirk
Keyword(s):  
High Peak ◽  
Current Ratio ◽  
Double Barrier ◽  
Resonant Tunnelling

Tunnel Dielectric Field-Effect Transistors with High Peak-to-Valley Current Ratio

2016 ◽  
Vol 46 (2) ◽  
pp. 1088-1092 ◽  
Author(s):  
Zhi Jiang ◽  
Yiqi Zhuang ◽  
Cong Li ◽  
Ping Wang
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Peak ◽  
Current Ratio
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