Permeation of hydrogen into silicon during low‐energy hydrogen ion beam bombardment

1987 ◽  
Vol 51 (7) ◽  
pp. 490-492 ◽  
Author(s):  
M. W. Horn ◽  
J. M. Heddleson ◽  
S. J. Fonash
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Hydrogen Ion

GaAs surface cleaning by low energy hydrogen ion beam treatment

2002 ◽  
Vol 20 (4) ◽  
pp. 1492-1497 ◽  
Author(s):  
N. Razek ◽  
K. Otte ◽  
T. Chassé ◽  
D. Hirsch ◽  
A. Schindler ◽  
...  
Keyword(s):  
Ion Beam ◽  
Surface Cleaning ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Gaas Surface ◽  
Ion Beam Treatment

Surface modification of polystyrene by low energy hydrogen ion beam

2006 ◽  
Vol 514 (1-2) ◽  
pp. 182-187 ◽  
Author(s):  
Xiangdong Xu ◽  
Raymund Wai Man Kwok ◽  
Woon Ming Lau
Keyword(s):  
Surface Modification ◽  
Ion Beam ◽  
Low Energy ◽  
Hydrogen Ion

Hydrogen Ion Beam Smoothening of Oxygen Roughened Ge(001) Surfaces

1988 ◽  
Vol 131 ◽  
Author(s):  
K. M. Horn ◽  
E. Chason ◽  
J. Y. Tsao ◽  
S. T. Picraux
Keyword(s):  
Chemical Reaction ◽  
Chemical Etching ◽  
Ion Beam ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Rate Of Recovery ◽  
Oxygen Gas

ABSTRACTA smooth Ge(001) surface can be severely roughened by chemical etching with oxygen gas and then returned to its original smoothness by exposure to hydrogen. The rate of recovery of the surface depends strongly on temperature, as well as on whether the hydrogen is introduced as a low energy ion beam or simply as a gas. The roughness induced in the surface by etching is “locked-in” after removal of the oxygen gas through pinning of ledges by residual contamination. This pinning prevents the surface from smoothening thermally. The introduction of hydrogen to the surface promotes a chemical reaction which frees the pinned sites and allows thermal smoothening to proceed.

Positive and negative hydrogen ion reflections of low-energy atomic and molecular hydrogen ion beam from HOPG and Mo surfaces

2020 ◽  
Vol 91 (1) ◽  
pp. 013313
Author(s):  
Nozomi Tanaka ◽  
Fumiya Ikemoto ◽  
Ippei Yamada ◽  
Yuji Shimabukuro ◽  
Masashi Kisaki ◽  
...  
Keyword(s):  
Molecular Hydrogen ◽  
Ion Beam ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Negative Hydrogen Ion

Production of a dense low energy positive hydrogen ion beam

Vacuum ◽  
1984 ◽  
Vol 34 (1-2) ◽  
pp. 25-29 ◽  
Author(s):  
PJM van Bommel ◽  
P Massmann ◽  
EHA Granneman ◽  
HJ Hopman ◽  
J Los
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Hydrogen Ion

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

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