Very high transconductance InGaAs/InP junction field‐effect transistor with submicrometer gate

1987 ◽  
Vol 50 (9) ◽  
pp. 535-536 ◽  
Author(s):  
J. Y. Raulin ◽  
E. Thorngren ◽  
M. A. di Forte‐Poisson ◽  
M. Razeghi ◽  
G. Colomer
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
Very High

Very high-transconductance heterojunction field-effect transistor (HFET)

1987 ◽  
Vol 23 (2) ◽  
pp. 77 ◽  
Author(s):  
G.W. Taylor ◽  
M.S. Lebby ◽  
T.Y. Chang ◽  
R.N. Gnall ◽  
N. Sauer ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
Very High

High-transconductance p-type SiGe modulation-doped field-effect transistor

1995 ◽  
Vol 31 (8) ◽  
pp. 680 ◽  
Author(s):  
M. Arafa ◽  
K. Ismail ◽  
P. Fay ◽  
J.O. Chu ◽  
B.S. Meyerson ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
P Type

Comparison of Bipolar and Unipolar SiC Switching Devices for Very High Power Applications

2007 ◽  
Vol 556-557 ◽  
pp. 975-978
Author(s):  
Kent Bertilsson ◽  
Chris I. Harris
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Static Case ◽  
Simulation Studies ◽  
Drift Diffusion ◽  
Element Approach ◽  
Effect Transistor ◽  
Unipolar Devices ◽  
Very High ◽  
Drift Layer

Both unipolar and injection SiC devices can be used for high voltage switching applications; it is not determined, however, for which applications one approach is preferred over the other. In this paper, simulation studies are used to compare the suitability of unipolar devices, in this case a JFET (Junction Field Effect Transistor) against an equivalent FCD (Field Controlled Diode) configuration up to very high voltages. The calculations are performed in a finite element approach, with commercial drift-diffusion software. Numerous drift layers have been simulated in a Monte-Carlo approach to ensure that the optimal design of the drift layers for different breakdown is used. In a static case, purely conductive losses in the drift layer in both unipolar and injection configuration are compared. Additionally the total losses are studied and compared in switched applications for different switching frequencies and current levels.

scholarly journals Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor

2018 ◽  
Vol 67 (6) ◽  
pp. 068101
Author(s):  
Zhang Jin-Feng ◽  
Yang Peng-Zhi ◽  
Ren Ze-Yang ◽  
Zhang Jin-Cheng ◽  
Xu Sheng-Rui ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
Long Channel
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