scholarly journals Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor

2018 ◽  
Vol 67 (6) ◽  
pp. 068101
Author(s):  
Zhang Jin-Feng ◽  
Yang Peng-Zhi ◽  
Ren Ze-Yang ◽  
Zhang Jin-Cheng ◽  
Xu Sheng-Rui ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
Long Channel

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

High-transconductance p-type SiGe modulation-doped field-effect transistor

1995 ◽  
Vol 31 (8) ◽  
pp. 680 ◽  
Author(s):  
M. Arafa ◽  
K. Ismail ◽  
P. Fay ◽  
J.O. Chu ◽  
B.S. Meyerson ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
P Type
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