Between explosive crystallization and amorphous regrowth: Inhomogeneous solidification upon pulsed‐laser annealing of amorphous silicon

1987 ◽  
Vol 50 (9) ◽  
pp. 507-509 ◽  
Author(s):  
J. J. P. Bruines ◽  
R. P. M. van Hal ◽  
B. H. Koek ◽  
M. P. A. Viegers ◽  
H. M. J. Boots
Keyword(s):  
Amorphous Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Explosive Crystallization

Crystallization Kinetics of Hydrogenated Amorphous Silicon During Pulsed Excimer Laser Annealing

1992 ◽  
Vol 258 ◽  
Author(s):  
S. E. Ready ◽  
J. H. Roh ◽  
J. B. Boyce ◽  
G. B. Anderson
Keyword(s):  
Amorphous Silicon ◽  
Crystallization Kinetics ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Molten Silicon ◽  
Excimer Laser Annealing ◽  
Pulsed Laser Annealing ◽  
Explosive Crystallization ◽  
Silicon Bulk ◽  
Kinetics Of

ABSTRACTExplosive crystallization of amorphous silicon (a-Si) during pulsed laser annealing occurs at an intermediate laser energy fluence above the threshold for surface melting. Mediated by a molten silicon layer which is undercooled with respect to crystalline silicon and above the melting point of a-Si, the crystallization interface drives down into the sample, sustaining itself due to the difference in the latent heats of the crystalline and amorphous silicon. Explosive crystallization has been the subject of numerous studies which have for the most part been restricted to ion implanted amorphized layers in silicon bulk samples. In this study we examine the crystallization kinetics of vapor deposited thin films of hydrogenated a-Si for films of differing hydrogen content and substrate temperature. We reevaluate current models of interface and nucleation kinetics qualitatively in light of these results. The fundamental physical mechanisms in these non-equilibrium phase transitions during pulsed laser annealing are discussed.

Fast Scan Laser Annealing

1981 ◽  
Vol 4 ◽  
Author(s):  
John T. Schott
Keyword(s):  
Vertical Integration ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Silicon On Insulator ◽  
Pulsed Laser Annealing ◽  
Explosive Crystallization ◽  
Deposited Energy ◽  
Scan Speed ◽  
Time And Energy ◽  
Anneal Time

ABSTRACTLaser-annealing phenomena have typically been divided into two distinct realms. Pulsed lasers involved very short anneal times and small deposited energy densities. Slowly scanned cw lasers involved intermediate times (ms range) and larger energy densities. Repetitively scanned electron beams have extended the range of anneal time and energy density toward conventional thermal processing. This paper examines the regime between pulsed laser annealing and conventional cw laser annealing. By greatly increasing the scan speed of the laser, annealing times and deposited energy densities are reduced and approach those of pulsed laser annealing. Applications are discussed in the areas of silicon-on-insulator recrystallization, low resistivity poly, vertical integration, local lateral seeding, explosive crystallization, and line-source simulation.

Investigation on the luminescent stability in amorphous silicon oxynitride systems

2020 ◽  
Vol 89 (1) ◽  
pp. 10304
Author(s):  
Pengzhan Zhang ◽  
Sake Wang ◽  
Kunji Chen ◽  
Xinglong Wu
Keyword(s):  
Amorphous Silicon ◽  
Laser Annealing ◽  
Bond Angle ◽  
Pulsed Laser ◽  
Silicon Oxynitride ◽  
Visible Range ◽  
Common Phenomenon ◽  
Light Emitting ◽  
Pulsed Laser Annealing ◽  
Degradation Properties

Light induced degradation is a common phenomenon in the photoluminescence (PL) properties of silicon (Si) based light emitting materials. Based on our previous research of highly efficient luminescent amorphous silicon oxynitride (a-SiNxOy) systems, in this work, we intensively investigated the light induced degradation properties of a-SiNxOy, and then further significantly improved the related PL stability. It was notable that the a-SiNxOy films exhibit a light induced time evolutionary metastable PL and have self-recovery properties when exposed in the air after a period. With the purpose of eliminating the light induced degradation and the meta-stable PL in a-SiNxOy films, we employed thermal annealing combined with pulsed laser annealing processes, which makes the film density improved and weak bond angle eliminated, thus obtaining the high stable luminescent a-SiNxOy films in visible range.

Pulsed laser annealing of zinc implanted GaAs

1978 ◽  
Vol 14 (4) ◽  
pp. 85 ◽  
Author(s):  
S.S. Kular ◽  
B.J. Sealy ◽  
K.G. Stephens ◽  
D.R. Chick ◽  
Q.V. Davis ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing
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