Theoretical and experimental investigation of the dynamics of pulsed laser annealing of amorphous silicon

1981 ◽  
Vol 52 (5) ◽  
pp. 3611-3617 ◽  
Author(s):  
Anjan Bhattacharyya ◽  
B. G. Streetman ◽  
K. Hess
Keyword(s):  
Experimental Investigation ◽  
Amorphous Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Crystallization Kinetics of Hydrogenated Amorphous Silicon During Pulsed Excimer Laser Annealing

1992 ◽  
Vol 258 ◽  
Author(s):  
S. E. Ready ◽  
J. H. Roh ◽  
J. B. Boyce ◽  
G. B. Anderson
Keyword(s):  
Amorphous Silicon ◽  
Crystallization Kinetics ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Molten Silicon ◽  
Excimer Laser Annealing ◽  
Pulsed Laser Annealing ◽  
Explosive Crystallization ◽  
Silicon Bulk ◽  
Kinetics Of

ABSTRACTExplosive crystallization of amorphous silicon (a-Si) during pulsed laser annealing occurs at an intermediate laser energy fluence above the threshold for surface melting. Mediated by a molten silicon layer which is undercooled with respect to crystalline silicon and above the melting point of a-Si, the crystallization interface drives down into the sample, sustaining itself due to the difference in the latent heats of the crystalline and amorphous silicon. Explosive crystallization has been the subject of numerous studies which have for the most part been restricted to ion implanted amorphized layers in silicon bulk samples. In this study we examine the crystallization kinetics of vapor deposited thin films of hydrogenated a-Si for films of differing hydrogen content and substrate temperature. We reevaluate current models of interface and nucleation kinetics qualitatively in light of these results. The fundamental physical mechanisms in these non-equilibrium phase transitions during pulsed laser annealing are discussed.

Investigation on the luminescent stability in amorphous silicon oxynitride systems

2020 ◽  
Vol 89 (1) ◽  
pp. 10304
Author(s):  
Pengzhan Zhang ◽  
Sake Wang ◽  
Kunji Chen ◽  
Xinglong Wu
Keyword(s):  
Amorphous Silicon ◽  
Laser Annealing ◽  
Bond Angle ◽  
Pulsed Laser ◽  
Silicon Oxynitride ◽  
Visible Range ◽  
Common Phenomenon ◽  
Light Emitting ◽  
Pulsed Laser Annealing ◽  
Degradation Properties

Light induced degradation is a common phenomenon in the photoluminescence (PL) properties of silicon (Si) based light emitting materials. Based on our previous research of highly efficient luminescent amorphous silicon oxynitride (a-SiNxOy) systems, in this work, we intensively investigated the light induced degradation properties of a-SiNxOy, and then further significantly improved the related PL stability. It was notable that the a-SiNxOy films exhibit a light induced time evolutionary metastable PL and have self-recovery properties when exposed in the air after a period. With the purpose of eliminating the light induced degradation and the meta-stable PL in a-SiNxOy films, we employed thermal annealing combined with pulsed laser annealing processes, which makes the film density improved and weak bond angle eliminated, thus obtaining the high stable luminescent a-SiNxOy films in visible range.

Between explosive crystallization and amorphous regrowth: Inhomogeneous solidification upon pulsed‐laser annealing of amorphous silicon

1987 ◽  
Vol 50 (9) ◽  
pp. 507-509 ◽  
Author(s):  
J. J. P. Bruines ◽  
R. P. M. van Hal ◽  
B. H. Koek ◽  
M. P. A. Viegers ◽  
H. M. J. Boots
Keyword(s):  
Amorphous Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Explosive Crystallization

Pulsed laser annealing of zinc implanted GaAs

1978 ◽  
Vol 14 (4) ◽  
pp. 85 ◽  
Author(s):  
S.S. Kular ◽  
B.J. Sealy ◽  
K.G. Stephens ◽  
D.R. Chick ◽  
Q.V. Davis ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Crystallized by Pulsed Laser Annealing

2021 ◽  
Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

scholarly journals Devitrification of thin film Cu-Zr metallic glass via ultrashort pulsed laser annealing

2021 ◽  
pp. 161437
Author(s):  
J. Antonowicz ◽  
P. Zalden ◽  
K. Sokolowski-Tinten ◽  
K. Georgarakis ◽  
R. Minikayev ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ultrashort Pulsed Laser
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