Trap‐Auger recombination in silicon of low carrier densities

P. T. Landsberg

doi:10.1063/1.98086

Trap‐Auger recombination in silicon of low carrier densities

Applied Physics Letters ◽

10.1063/1.98086 ◽

1987 ◽

Vol 50 (12) ◽

pp. 745-747 ◽

Cited By ~ 56

Author(s):

P. T. Landsberg

Keyword(s):

Auger Recombination

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Band-to-band auger recombination and carrier-carrier scattering in power rectifiers

Electronics Letters ◽

10.1049/el:19720421 ◽

1972 ◽

Vol 8 (23) ◽

pp. 580 ◽

Cited By ~ 5

Author(s):

N.G. Nilsson

Keyword(s):

Auger Recombination ◽

Carrier Scattering

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Measurement of radiative and auger recombination rates in p-type InGaAsP diode lasers

Electronics Letters ◽

10.1049/el:19820408 ◽

1982 ◽

Vol 18 (14) ◽

pp. 595 ◽

Cited By ~ 28

Author(s):

C.B. Su ◽

J. Schlafer ◽

J. Manning ◽

R. Olshansky

Keyword(s):

Auger Recombination ◽

Diode Lasers ◽

Recombination Rates ◽

P Type

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Auger Recombination and Multiple Exciton Generation in Colloidal Two-Dimensional Perovskite Nanoplatelets: Implications for Light-Emitting Devices

ACS Applied Nano Materials ◽

10.1021/acsanm.0c02868 ◽

2020 ◽

Author(s):

Carolina Villamil Franco ◽

Benoît Mahler ◽

Christian Cornaggia ◽

Thomas Gustavsson ◽

Elsa Cassette

Keyword(s):

Auger Recombination ◽

Two Dimensional ◽

Multiple Exciton Generation ◽

Light Emitting ◽

Light Emitting Devices

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Auger recombination with traps in quantum-well semiconductors

Applied Physics A Solids and Surface ◽

10.1007/bf00331406 ◽

1993 ◽

Vol 56 (6) ◽

pp. 567-569 ◽

Cited By ~ 4

Author(s):

A. Haug

Keyword(s):

Quantum Well ◽

Auger Recombination

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Auger recombination in P-type GaSb

Journal of Luminescence ◽

10.1016/0022-2313(81)90072-7 ◽

1981 ◽

Vol 24-25 ◽

pp. 697-700 ◽

Cited By ~ 18

Author(s):

A.N. Titkov ◽

G.V. Benemanskaya ◽

B.L. Gelmont ◽

G.N. Iluridthe ◽

Z.N. Sokolova

Keyword(s):

Auger Recombination ◽

P Type

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Temperature dependence of Auger recombination in highly injected crystalline silicon

Journal of Applied Physics ◽

10.1063/1.4768900 ◽

2012 ◽

Vol 112 (11) ◽

pp. 113708 ◽

Cited By ~ 8

Author(s):

Sisi Wang ◽

Daniel Macdonald

Keyword(s):

Temperature Dependence ◽

Auger Recombination ◽

Crystalline Silicon

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Auger recombination and leakage in InGaN/GaN quantum well LEDs

10.1117/12.2037043 ◽

2014 ◽

Cited By ~ 8

Author(s):

Friedhard Römer ◽

Marcus Deppner ◽

Christian Range ◽

Bernd Witzigmann

Keyword(s):

Quantum Well ◽

Auger Recombination

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Auger Recombination in Hg1−xCdxTe

Journal of Applied Physics ◽

10.1063/1.1659443 ◽

1970 ◽

Vol 41 (8) ◽

pp. 3465-3467 ◽

Cited By ~ 61

Author(s):

P. E. Petersen

Keyword(s):

Auger Recombination

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Turn-on delay and Auger recombination in long-wavelength vertical-cavity surface-emitting lasers

Applied Physics Letters ◽

10.1063/1.3488013 ◽

2010 ◽

Vol 97 (13) ◽

pp. 131102 ◽

Cited By ~ 9

Author(s):

N. Volet ◽

E. Kapon

Keyword(s):

Auger Recombination ◽

Cavity Surface ◽

Long Wavelength ◽

Turn On ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity

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A formalism for the indirect Auger effect. II

Proceedings of the Royal Society of London Series A - Mathematical and Physical Sciences ◽

10.1098/rspa.1976.0017 ◽

1976 ◽

Vol 347 (1651) ◽

pp. 565-573 ◽

Cited By ~ 14

Keyword(s):

Band Structure ◽

Auger Recombination ◽

Preceding Paper ◽

Recombination Coefficient ◽

Overlap Integrals ◽

Estimated Parameters ◽

Order Of Magnitude ◽

Auger Effect ◽

First Time ◽

Auger Recombination Rate

The Auger recombination rate in indirect semiconductors with zincblende and diamond lattices is investigated, account being taken, for the first time, the properties of overlap integrals near symmetry points and axes. The effect of using theoretically estimated parameters is a reduction of the recombination coefficient by a factor 10. It is explained that the results, and those of the preceding paper, are still subject to uncertainties arising from the band structure so that only the order of magnitude of these coefficients can so far be regarded as known theoretically.

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