Auger Recombination in Hg1−xCdxTe

1970 ◽  
Vol 41 (8) ◽  
pp. 3465-3467 ◽  
Author(s):  
P. E. Petersen
Keyword(s):  
Auger Recombination

Measurement of radiative and auger recombination rates in p-type InGaAsP diode lasers

1982 ◽  
Vol 18 (14) ◽  
pp. 595 ◽  
Author(s):  
C.B. Su ◽  
J. Schlafer ◽  
J. Manning ◽  
R. Olshansky
Keyword(s):  
Auger Recombination ◽  
Diode Lasers ◽  
Recombination Rates ◽  
P Type

Trap‐Auger recombination in silicon of low carrier densities

1987 ◽  
Vol 50 (12) ◽  
pp. 745-747 ◽  
Author(s):  
P. T. Landsberg
Keyword(s):  
Auger Recombination

Auger recombination in P-type GaSb

1981 ◽  
Vol 24-25 ◽  
pp. 697-700 ◽  
Author(s):  
A.N. Titkov ◽  
G.V. Benemanskaya ◽  
B.L. Gelmont ◽  
G.N. Iluridthe ◽  
Z.N. Sokolova
Keyword(s):  
Auger Recombination ◽  
P Type

Auger recombination and leakage in InGaN/GaN quantum well LEDs

2014 ◽  
Author(s):  
Friedhard Römer ◽  
Marcus Deppner ◽  
Christian Range ◽  
Bernd Witzigmann
Keyword(s):  
Quantum Well ◽  
Auger Recombination

A formalism for the indirect Auger effect. II

1976 ◽  
Vol 347 (1651) ◽  
pp. 565-573 ◽  
Keyword(s):  
Band Structure ◽  
Auger Recombination ◽  
Preceding Paper ◽  
Recombination Coefficient ◽  
Overlap Integrals ◽  
Estimated Parameters ◽  
Order Of Magnitude ◽  
Auger Effect ◽  
First Time ◽  
Auger Recombination Rate

The Auger recombination rate in indirect semiconductors with zincblende and diamond lattices is investigated, account being taken, for the first time, the properties of overlap integrals near symmetry points and axes. The effect of using theoretically estimated parameters is a reduction of the recombination coefficient by a factor 10. It is explained that the results, and those of the preceding paper, are still subject to uncertainties arising from the band structure so that only the order of magnitude of these coefficients can so far be regarded as known theoretically.

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