Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy

1987 ◽  
Vol 50 (11) ◽  
pp. 673-675 ◽  
Author(s):  
A. Gomyo ◽  
T. Suzuki ◽  
K. Kobayashi ◽  
S. Kawata ◽  
I. Hino ◽  
...  
Keyword(s):  
Band Gap ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Band Gap Energy ◽  
Vapor Phase Epitaxy ◽  
Gap Energy ◽  
Ordered State

Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy

1988 ◽  
Vol 27 (Part 1, No. 11) ◽  
pp. 2098-2106 ◽  
Author(s):  
Tohru Suzuki ◽  
Akiko Gomyo ◽  
Sumio Iijima ◽  
Kenichi Kobayashi ◽  
Seiji Kawata ◽  
...  
Keyword(s):  
Band Gap ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Band Gap Energy ◽  
Vapor Phase Epitaxy ◽  
Gap Energy

Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga0.5In0.5P Grown by Metalorganic Vapor Phase Epitaxy

1989 ◽  
Vol 28 (Part 2, No. 8) ◽  
pp. L1330-L1333 ◽  
Author(s):  
Akiko Gomyo ◽  
Hitoshi Hotta ◽  
Isao Hino ◽  
Seiji Kawata ◽  
Kenichi Kobayashi ◽  
...  
Keyword(s):  
Band Gap ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Band Gap Energy ◽  
Vapor Phase Epitaxy ◽  
Gap Energy ◽  
Doping Effects

P-Type Doping Effects on Band-Gap Energy for Ga0.5In0.5P Grown by Metalorganic Vapor Phase Epitaxy

1988 ◽  
Vol 27 (Part 2, No. 8) ◽  
pp. L1549-L1552 ◽  
Author(s):  
Tohru Suzuki ◽  
Akiko Gomyo ◽  
Isao Hino ◽  
Kenichi Kobayashi ◽  
Seiji Kawata ◽  
...  
Keyword(s):  
Band Gap ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Band Gap Energy ◽  
Vapor Phase Epitaxy ◽  
Gap Energy ◽  
Doping Effects ◽  
P Type

N-rich GaNAs with High As Content Grown by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
Akitaka Kimura ◽  
H. F. Tang ◽  
C. A. Paulson ◽  
T. F. Kuech
Keyword(s):  
Vapor Phase ◽  
Single Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Band Gap Energy ◽  
Vapor Phase Epitaxy ◽  
Miscibility Gap ◽  
X Ray Diffraction ◽  
Specular Surfaces ◽  
Rich Side ◽  
Absorption Measurements

ABSTRACTGaN1-yAsy epitaxial alloys on the N-rich side with high As content were grown by metalorganic vapor phase epitaxy. They had specular surfaces and the single-phase epitaxial nature was confirmed by X-ray diffraction. The As incorporation increased through both a decrease in the growth temperature and V/III ratio. These trends were similar to that found in other III-V alloy systems which exhibit a large miscibility gap and the anion incorporation was considered to have been limited kinetically under the conditions of the low V/III ratio. The range of achieved As content was extended up to y=0.067, which is a composition well within the miscibility gap. The As-content dependence of the band gap energy was determined by optical absorption measurements and large bowing parameter of 16.8 ± 0.9 eV was determined.

scholarly journals Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Galia Pozina ◽  
Chih-Wei Hsu ◽  
Natalia Abrikossova ◽  
Mikhail A. Kaliteevski ◽  
Carl Hemmingsson
Keyword(s):  
Band Gap ◽  
Vapor Phase ◽  
Wide Band ◽  
Band Gap Energy ◽  
Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Wide Band Gap ◽  
Vacancy Defects ◽  
Sapphire Substrates ◽  
Efficient Power

AbstractGallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial $$\upbeta$$ β -Ga2O3 layers is demonstrated using a simulation model to predict the distribution of the ratio of gallium to oxygen precursors inside the reactor chamber. The best structural quality is obtained for layers grown at 825–850 °C and with a III/VI precursor ratio of 0.2. Although the structural and optical properties are similar, the surface morphology is more deteriorated for the $$\upbeta$$ β -Ga2O3 layers grown on 5 degree off-axis sapphire substrates compared to on-axis samples even for optimized process parameters. Cathodoluminescence with a peak at 3.3 eV is typical for unintentionally doped n-type $$\upbeta$$ β -Ga2O3 and shows the appearance of additional emissions in blue and green region at ~ 3.0, ~ 2.8, ~ 2.6 and ~ 2.4 eV, especially when the growth temperatures is lowered to 800–825 °C. Estimation of the band gap energy to ~ 4.65 eV from absorption indicates a high density of vacancy defects.

Programmed Band Gap Modulation within van der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy

2020 ◽  
Vol 32 (12) ◽  
pp. 5084-5090 ◽  
Author(s):  
Chang-Soo Lee ◽  
Gangtae Jin ◽  
Seung-Young Seo ◽  
Juho Kim ◽  
Cheolhee Han ◽  
...  
Keyword(s):  
Band Gap ◽  
Vapor Phase ◽  
Van Der Waals ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Band Gap Modulation

Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy

2012 ◽  
Vol 100 (12) ◽  
pp. 121120 ◽  
Author(s):  
T. W. Kim ◽  
T. J. Garrod ◽  
K. Kim ◽  
J. J. Lee ◽  
S. D. LaLumondiere ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Vapor Phase ◽  
Narrow Band ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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