Band gap energy bowing and residual strain in CuAl(SxSe1−x)2 chalcopyrite semiconductor epilayers grown by low-pressure metalorganic vapor phase epitaxy

2002 ◽  
Vol 91 (9) ◽  
pp. 5909-5914 ◽  
Author(s):  
Yoshiyuki Harada ◽  
Hisayuki Nakanishi ◽  
Shigefusa F. Chichibu
Keyword(s):  
Band Gap ◽  
Vapor Phase ◽  
Residual Strain ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Band Gap Energy ◽  
Vapor Phase Epitaxy ◽  
Gap Energy ◽  
Chalcopyrite Semiconductor

Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy

1988 ◽  
Vol 27 (Part 1, No. 11) ◽  
pp. 2098-2106 ◽  
Author(s):  
Tohru Suzuki ◽  
Akiko Gomyo ◽  
Sumio Iijima ◽  
Kenichi Kobayashi ◽  
Seiji Kawata ◽  
...  
Keyword(s):  
Band Gap ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Band Gap Energy ◽  
Vapor Phase Epitaxy ◽  
Gap Energy

Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga0.5In0.5P Grown by Metalorganic Vapor Phase Epitaxy

1989 ◽  
Vol 28 (Part 2, No. 8) ◽  
pp. L1330-L1333 ◽  
Author(s):  
Akiko Gomyo ◽  
Hitoshi Hotta ◽  
Isao Hino ◽  
Seiji Kawata ◽  
Kenichi Kobayashi ◽  
...  
Keyword(s):  
Band Gap ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Band Gap Energy ◽  
Vapor Phase Epitaxy ◽  
Gap Energy ◽  
Doping Effects

P-Type Doping Effects on Band-Gap Energy for Ga0.5In0.5P Grown by Metalorganic Vapor Phase Epitaxy

1988 ◽  
Vol 27 (Part 2, No. 8) ◽  
pp. L1549-L1552 ◽  
Author(s):  
Tohru Suzuki ◽  
Akiko Gomyo ◽  
Isao Hino ◽  
Kenichi Kobayashi ◽  
Seiji Kawata ◽  
...  
Keyword(s):  
Band Gap ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Band Gap Energy ◽  
Vapor Phase Epitaxy ◽  
Gap Energy ◽  
Doping Effects ◽  
P Type

N-rich GaNAs with High As Content Grown by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
Akitaka Kimura ◽  
H. F. Tang ◽  
C. A. Paulson ◽  
T. F. Kuech
Keyword(s):  
Vapor Phase ◽  
Single Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Band Gap Energy ◽  
Vapor Phase Epitaxy ◽  
Miscibility Gap ◽  
X Ray Diffraction ◽  
Specular Surfaces ◽  
Rich Side ◽  
Absorption Measurements

ABSTRACTGaN1-yAsy epitaxial alloys on the N-rich side with high As content were grown by metalorganic vapor phase epitaxy. They had specular surfaces and the single-phase epitaxial nature was confirmed by X-ray diffraction. The As incorporation increased through both a decrease in the growth temperature and V/III ratio. These trends were similar to that found in other III-V alloy systems which exhibit a large miscibility gap and the anion incorporation was considered to have been limited kinetically under the conditions of the low V/III ratio. The range of achieved As content was extended up to y=0.067, which is a composition well within the miscibility gap. The As-content dependence of the band gap energy was determined by optical absorption measurements and large bowing parameter of 16.8 ± 0.9 eV was determined.

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped
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