Tungsten deposition on porous silicon for formation of buried conductors in single crystal silicon

1986 ◽  
Vol 49 (7) ◽  
pp. 403-405 ◽  
Author(s):  
S. S. Tsao ◽  
R. S. Blewer ◽  
J. Y. Tsao
Keyword(s):  
Porous Silicon ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon

The Effect of Starting Silicon Crystal Structure on Photoluminescence Intensity of Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
W. B. Dubbelday ◽  
S. D. Russell ◽  
K. L. Kavanagh
Keyword(s):  
Porous Silicon ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Luminescent Materials ◽  
Photoluminescence Intensity ◽  
Crystal Silicon ◽  
Chemical Etch ◽  
Porosity Measurements

ABSTRACTIn previous work we reported that porous silicon (PS) films formed using a dilute HF:HNO3 chemical etch on polycrystalline, implant damaged single crystal, or amorphous starting material have luminescent characteristics that differ from PS fabricated on single crystal silicon1. Polycrystalline and implant damaged porous silicon exhibits brighter luminescence compared to single crystal silicon etched under identical conditions. No photoluminescence is detected from the porous amorphous silicon. In this work these effects are examined using HF:NaNO2 solutions with freely available NO2. The accelerated etching effects from work damage are reduced, and the PS from polycrystalline and implant damaged silicon luminesce with the same intensity as the PS from single crystal silicon. Again, etched amorphous silicon does not luminesce. TEM and EDX porosity measurements are used to determine the differences in structure and etching characteristics between the luminescent and non-luminescent materials.

A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon

2006 ◽  
Vol 40 (2) ◽  
pp. 175-179 ◽  
Author(s):  
A. A. Evtukh ◽  
É. B. Kaganovich ◽  
É. G. Manoĭlov ◽  
N. A. Semenenko
Keyword(s):  
Porous Silicon ◽  
Single Crystal ◽  
Charge Transport ◽  
Single Crystal Silicon ◽  
Crystal Silicon

scholarly journals Optical Properties of Monocrystalline Silicon Nanowires

2021 ◽  
Vol 22 (3) ◽  
pp. 453-459
Author(s):  
P.O. Gentsar ◽  
A.V. Stronski ◽  
L.A. Karachevtseva ◽  
V.F. Onyshchenko
Keyword(s):  
Porous Silicon ◽  
Single Crystal ◽  
Silicon Nanowires ◽  
Single Crystal Silicon ◽  
Single Crystal Substrate ◽  
Transmission Spectra ◽  
Crystal Silicon ◽  
Reflection And Transmission ◽  
Crystal Matrix ◽  
Crystal Substrate

The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 ÷ 1.7 μm. The layers of nanowires had a thickness of 5.5 µm, 20 µm, 50 µm and a porosity of 60 %. The porous silicon layers had a thickness of 5 μm, 50 μm and a porosity of 45 %, 55 % and 65 %. The change in the energy band structure in single-crystal silicon nanowires and in a single-crystal matrix of porous silicon is shown.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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