Lateral solid phase epitaxy of Si over SiO2patterns and its application to silicon‐on‐insulator transistors

1986 ◽  
Vol 49 (7) ◽  
pp. 397-399 ◽  
Author(s):  
Masayoshi Sasaki ◽  
Teruo Katoh ◽  
Hiroshi Onoda ◽  
Norio Hirashita
Keyword(s):  
Solid Phase ◽  
Silicon On Insulator ◽  
Solid Phase Epitaxy

Effects of thin SiO2capping layer on silicon‐on‐insulator formation by lateral solid‐phase epitaxy

1992 ◽  
Vol 60 (1) ◽  
pp. 80-81 ◽  
Author(s):  
K. Kusukawa ◽  
M. Ohkura ◽  
M. Moniwa ◽  
M. Miyao
Keyword(s):  
Solid Phase ◽  
Silicon On Insulator ◽  
Solid Phase Epitaxy

Grown‐facet‐dependent characteristics of silicon‐on‐insulator by lateral solid phase epitaxy

1988 ◽  
Vol 52 (20) ◽  
pp. 1681-1683 ◽  
Author(s):  
K. Kusukawa ◽  
M. Moniwa ◽  
E. Murakami ◽  
T. Warabisako ◽  
M. Miyao
Keyword(s):  
Solid Phase ◽  
Silicon On Insulator ◽  
Solid Phase Epitaxy

Solid Phase Epitaxy of UHV-Deposited Amorphous Si Over Recessed SiO2 Layer

1984 ◽  
Vol 35 ◽  
Author(s):  
M. Tabe ◽  
Y. Kunii
Keyword(s):  
Solid Phase ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Ultra High Vacuum ◽  
Low Density ◽  
Solid Phase Epitaxy ◽  
Planar Substrate ◽  
Shadowing Effect ◽  
Amorphous Si

ABSTRACTLateral solid phase epitaxy (L-SPE) of ultra-high-vacuum (UHV) deposited amorphous Si (a-Si) over patterned SiO2 has been studied to produce monocrystalline silicon-on-insulator (SOI) films. When employing UHV-deposited a-Si, it is essential for L-SPE to reduce step height at the pattern boundary. This is because low density a-Si including columnar voids is formed at the step wall by the self-shadowing effect and SPE region does not extend across the low density a-Si area. L-SPE growth distance of 7 μm was achieved by low temperature annealing (575°C, 20 hr) on a planar substrate with recessed SiO2 patterns. Another deposition technique of a-Si for SPE, i.e., chemical vapor deposition is reviewed for comparison.

Al-mediated Solid-Phase Epitaxy of Silicon-On-Insulator

2010 ◽  
Vol 1245 ◽  
Author(s):  
Agata Sakic ◽  
Yann Civale ◽  
Lis K. Nanver ◽  
Cleber Biasotto ◽  
Vladimir Jovanovic
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Crystal Orientation ◽  
Solid Phase ◽  
Silicon On Insulator ◽  
Solid Phase Epitaxy ◽  
Si Substrate ◽  
High Quality ◽  
Lateral Overgrowth

AbstractSilicon-on-insulator (SOI) regions have been grown on lithographically predetermined positions by Al-mediated Solid-Phase Epitaxy (SPE) of amorphous silicon (α-Si). A controllable Si lateral overgrowth is induced from windows formed in silicon dioxide (SiO2) to the crystalline Si substrate. The resulting hundred of-nanometer large areas of high-quality monocrystalline SOI are formed at the temperatures that can be as low as 400 °C. The as-obtained SOI regions were found to take on the same crystal orientation as the (100) Si substrate and have the ability to merge seamlessly over the oxide.

Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate

2006 ◽  
Vol 89 (3) ◽  
pp. 032101 ◽  
Author(s):  
S. Balakumar ◽  
C. H. Tung ◽  
G. Q. Lo ◽  
R. Kumar ◽  
N. Balasubramanian ◽  
...  
Keyword(s):  
Solid Phase ◽  
Sige Layer ◽  
Silicon On Insulator ◽  
Solid Phase Epitaxy ◽  
Insulator Substrate

Assessment of GaAs heteroepitaxial films grown on silicon‐on‐sapphire upgraded by double solid phase epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1756-1758 ◽  
Author(s):  
J. B. Posthill ◽  
R. J. Markunas ◽  
T. P. Humphreys ◽  
R. J. Nemanich ◽  
K. Das ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy
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