Solid Phase Epitaxy of UHV-Deposited Amorphous Si Over Recessed SiO2 Layer

1984 ◽  
Vol 35 ◽  
Author(s):  
M. Tabe ◽  
Y. Kunii
Keyword(s):  
Solid Phase ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Ultra High Vacuum ◽  
Low Density ◽  
Solid Phase Epitaxy ◽  
Planar Substrate ◽  
Shadowing Effect ◽  
Amorphous Si

ABSTRACTLateral solid phase epitaxy (L-SPE) of ultra-high-vacuum (UHV) deposited amorphous Si (a-Si) over patterned SiO2 has been studied to produce monocrystalline silicon-on-insulator (SOI) films. When employing UHV-deposited a-Si, it is essential for L-SPE to reduce step height at the pattern boundary. This is because low density a-Si including columnar voids is formed at the step wall by the self-shadowing effect and SPE region does not extend across the low density a-Si area. L-SPE growth distance of 7 μm was achieved by low temperature annealing (575°C, 20 hr) on a planar substrate with recessed SiO2 patterns. Another deposition technique of a-Si for SPE, i.e., chemical vapor deposition is reviewed for comparison.

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

2005 ◽  
Vol 239 (3-4) ◽  
pp. 327-334 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Silicon On Insulator ◽  
Ultra High Vacuum

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of

Effects of thin SiO2capping layer on silicon‐on‐insulator formation by lateral solid‐phase epitaxy

1992 ◽  
Vol 60 (1) ◽  
pp. 80-81 ◽  
Author(s):  
K. Kusukawa ◽  
M. Ohkura ◽  
M. Moniwa ◽  
M. Miyao
Keyword(s):  
Solid Phase ◽  
Silicon On Insulator ◽  
Solid Phase Epitaxy

Challenge to 200 mm 3C-SiC Wafers Using SOI

2005 ◽  
Vol 483-485 ◽  
pp. 205-208 ◽  
Author(s):  
Motoi Nakao ◽  
Hirofumi Iikawa ◽  
Katsutoshi Izumi ◽  
Takashi Yokoyama ◽  
Sumio Kobayashi
Keyword(s):  
Cross Section ◽  
Vapor Deposition ◽  
Seed Layer ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Average Thickness ◽  
Entire Region ◽  
Transmission Electron ◽  
Good Crystallinity

200 mm wafer with 3C-SiC/SiO2/Si structure has been fabricated using 200 mm siliconon- insulator (SOI) wafer. A top Si layer of 200 mm SOI wafer was thinned down to approximately 5 nm by sacrificial oxidization, and the ultrathin top Si layer was metamorphosed into a 3C-SiC seed layer using a carbonization process. Afterward, an epitaxial SiC layer was grown on the SiC seed layer with ultra-high vacuum chemical vapor deposition. A cross-section transmission electron microscope indicated that a 3C-SiC seed layer was formed directly on the buried oxide layer of 200 mm wafer. The epitaxial SiC layer with an average thickness of approximately 100 nm on the seed was recognized over the entire region of the wafer, although thickness uniformity of the epitaxial SiC layer was not as good as that of SiC seed layer. A transmission electron diffraction image of the epitaxial SiC layer showed a monocrystalline 3C-SiC(100) layer with good crystallinity. These results indicate that our method enables to realize 200 mm SiC wafers.

Molecular beam and solid-phase epitaxies of silicon under ultra-high vacuum

1978 ◽  
Vol 45 ◽  
pp. 287-291 ◽  
Author(s):  
Y. Shiraki ◽  
Y. Katayama ◽  
K.L.I. Kobayashi ◽  
K.F. Komatsubara
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
High Vacuum ◽  
Ultra High Vacuum

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Homoepitaxy of Ge on ozone-treated Ge (1 0 0) substrate by ultra-high vacuum chemical vapor deposition

2019 ◽  
Vol 507 ◽  
pp. 113-117 ◽  
Author(s):  
Jiaqi Wang ◽  
Limeng Shen ◽  
Guangyang Lin ◽  
Jianyuan Wang ◽  
Jianfang Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum

Amorphous‐Si/crystalline‐Si facet formation during Si solid‐phase epitaxy near Si/SiO2 boundary

1984 ◽  
Vol 56 (2) ◽  
pp. 279-285 ◽  
Author(s):  
Yasuo Kunii ◽  
Michiharu Tabe ◽  
Kenji Kajiyama
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Facet Formation
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