Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition

D. Feketa; K. T. Chan; J. M. Ballantyne; L. F. Eastman

doi:10.1063/1.97258

Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.97258 ◽

1986 ◽

Vol 49 (24) ◽

pp. 1659-1660 ◽

Cited By ~ 89

Author(s):

D. Feketa ◽

K. T. Chan ◽

J. M. Ballantyne ◽

L. F. Eastman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Graded Index ◽

Quantum Well Laser ◽

Metalorganic Chemical

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1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition

IEEE Journal of Quantum Electronics ◽

10.1109/3.234387 ◽

1993 ◽

Vol 29 (6) ◽

pp. 1528-1535 ◽

Cited By ~ 27

Author(s):

A. Kasukawa ◽

T. Namegaya ◽

T. Fukushima ◽

N. Iwai ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Metalorganic Chemical

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1.3 μm InAsyP1−y/InP strained‐layer quantum well laser diodes grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.108163 ◽

1992 ◽

Vol 61 (21) ◽

pp. 2506-2508 ◽

Cited By ~ 33

Author(s):

Y. Imajo ◽

A. Kasukawa ◽

T. Namegaya ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Metalorganic Chemical

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Low threshold 1.3μm InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

13th IEEE International Semiconductor Laser Conference ◽

10.1109/islc.1992.763636 ◽

2005 ◽

Cited By ~ 5

Author(s):

A. Kasukawa ◽

Y. Imajo ◽

T. Namegaya ◽

Y. Hiratani ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Low Threshold ◽

Metalorganic Chemical

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GaAs/GaAlAs quantum well laser with a lateral spatial variation in thickness grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.98104 ◽

1987 ◽

Vol 50 (11) ◽

pp. 635-637 ◽

Cited By ~ 17

Author(s):

D. Fekete ◽

D. Bour ◽

J. M. Ballantyne ◽

L. F. Eastman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Spatial Variation ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Laser ◽

Metalorganic Chemical

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InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.100935 ◽

1989 ◽

Vol 54 (6) ◽

pp. 499-501 ◽

Cited By ~ 70

Author(s):

P. K. York ◽

K. J. Beernink ◽

G. E. Fernández ◽

J. J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Buried Heterostructure ◽

Metalorganic Chemical

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Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

Applied Physics Letters ◽

10.1063/1.115871 ◽

1996 ◽

Vol 68 (16) ◽

pp. 2240-2242 ◽

Cited By ~ 21

Author(s):

A. Bhattacharya ◽

L. J. Mawst ◽

S. Nayak ◽

J. Li ◽

T. F. Kuech

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Quantum Well Laser ◽

Gaas Substrates ◽

Interface Structures ◽

Metalorganic Chemical

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Distributed feedback strained layer quantum well heterostructure 980 nm laser fabricated by two‐step metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.108589 ◽

1993 ◽

Vol 62 (8) ◽

pp. 820-822 ◽

Cited By ~ 9

Author(s):

T. M. Cockerill ◽

J. Honig ◽

D. V. Forbes ◽

J. J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Distributed Feedback ◽

Strained Layer ◽

Metalorganic Chemical

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Properties of InGaN-GaN multi-quantum well laser diode grown by low pressure metalorganic chemical vapor deposition

Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464) ◽

10.1109/cleopr.1999.811417 ◽

2003 ◽

Author(s):

T.I. Kim

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Laser Diode ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Quantum Well Laser ◽

Multi Quantum Well ◽

Metalorganic Chemical

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Dependence of threshold current density on quantum well composition for strained‐layer InGaAs‐GaAs lasers by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.101986 ◽

1989 ◽

Vol 55 (25) ◽

pp. 2585-2587 ◽

Cited By ~ 47

Author(s):

K. J. Beernink ◽

P. K. York ◽

J. J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Current Density ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Threshold Current ◽

Threshold Current Density ◽

Strained Layer ◽

Metalorganic Chemical

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Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition

IEEE Journal of Quantum Electronics ◽

10.1109/3.283791 ◽

1994 ◽

Vol 30 (2) ◽

pp. 441-445 ◽

Cited By ~ 26

Author(s):

T.M. Cockerill ◽

D.V. Forbes ◽

J.A. Dantzig ◽

J.J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Strained Layer ◽

Selective Area ◽

Buried Heterostructure ◽

Metalorganic Chemical

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