Patterning of fine structures in silicon dioxide layers by ion beam exposure and wet chemical etching

1986 ◽  
Vol 49 (11) ◽  
pp. 654-656 ◽  
Author(s):  
J. R. A. Cleaver ◽  
P. J. Heard ◽  
A. F. Evason ◽  
H. Ahmed
Keyword(s):  
Silicon Dioxide ◽  
Chemical Etching ◽  
Ion Beam ◽  
Fine Structures ◽  
Wet Chemical ◽  
Wet Chemical Etching

Creation of 3D Patterns in Si by Focused Ga-Ion Beam and Anisotropic Wet Chemical Etching

1992 ◽  
Vol 279 ◽  
Author(s):  
Wei Chen ◽  
P. Chen ◽  
A. Madhukar ◽  
R. Viswanathan ◽  
J. So
Keyword(s):  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Free Standing ◽  
Scale Thickness ◽  
Ion Beam Implantation ◽  
Etch Stop ◽  
Wet Chemical ◽  
Etching Behavior ◽  
Wet Chemical Etching

ABSTRACTWe report the realization of free standing 3D structures as tall as ∼ 7μm with nano-scale thickness in Si using the technique of Ga focused ion beam implantation and sputtering followed by wet chemical etching. Some of the previously investigated subjects such as anisotropie etching behavior of crystalline Si and etch stop effect of Ga+implanted Si etched in certain anisotropie chemical etchants have been further explored with the emphasis on exploiting them in realizing free standing structures. The design and fabrication considerations in achieving such free standing structures are discussed and some typical structures fabricated by this technique are shown.

scholarly journals Three-dimensional structuring of sapphire by sequential He + ion-beam implantation and wet chemical etching

2003 ◽  
Vol 76 (7) ◽  
pp. 1109-1112 ◽  
Author(s):  
A. Crunteanu ◽  
G. Jänchen ◽  
P. Hoffmann ◽  
M. Pollnau ◽  
C. Buchal ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ion Beam Implantation ◽  
Wet Chemical ◽  
Wet Chemical Etching

Micro Fabrication by Focused Ion Beam and Wet Chemical Etching

2004 ◽  
Vol 2004.5 (0) ◽  
pp. 111-112
Author(s):  
Noritaka KAWASEGI ◽  
Noboru MORITA ◽  
Noboru TAKANO ◽  
Kiwamu ASHIDA ◽  
Jun TANIGUCHI ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Micro Fabrication ◽  
Wet Chemical ◽  
Wet Chemical Etching

Highly Resolved Maskless Patterning on InP by Focused Ion Beam Enhanced Wet Chemical Etching

1999 ◽  
Vol 38 (Part 1, No. 10) ◽  
pp. 6142-6144 ◽  
Author(s):  
Harald König ◽  
Johann Peter Reithmaier ◽  
Alfred Forchel
Keyword(s):  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Maskless Patterning

Wet chemical etching of single-bore microstructured silicon dioxide fibers

2020 ◽  
Vol 32 (7) ◽  
pp. 073314
Author(s):  
Josef A. Giddings ◽  
Yvonne M. Stokes ◽  
Kyle J. Bachus ◽  
Heike Ebendorff-Heidepriem
Keyword(s):  
Silicon Dioxide ◽  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

Recent Advances in Broad Ion Beam Based Techniques/Instrumentation for SEM Specimen Preparation of Semiconductors

1999 ◽  
Author(s):  
R. Alani ◽  
R. J. Mitro ◽  
W. Hauffe
Keyword(s):  
Cross Sections ◽  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Inert Gas ◽  
Specimen Preparation ◽  
Ion Beam Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

Abstract The semiconductor industry routinely prepares crosssectional SEM specimens using several traditional techniques. Included in these are cleaving, mechanical polishing, wet chemical etching and focused ion beam (FIB) milling. This presentation deals with a new alternate method for preparation of SEM semiconductor specimens based upon a dedicated broad ion beam instrument. Offered initially as an alternative to wet chemical etching, the instrument was designed to etch and coat SEM and metallographic specimens in one vacuum chamber using inert gas (Ar) ion beams. The system has recently undergone further enhancement by introducing iodine Reactive Ion Beam Etching (RIBE) producing much improved etching/cleaning capabilities compared with inert gas ion beam etching. Further results indicate Ar broad ion beam etching can offer a rapid, simple, more affordable alternative (to FIB machines) for precision cross sections and for “slope cutting,” a technique producing large cross-sections within a short time frame. The overall effectiveness of this system for iodine RIBE etching, for precision cross sectioning and “slope cutting” will be shown for a number of traditional and advanced semiconductor devices.

A new approach for Cross-Sectioning Sem Specimens of Semiconductors by Broad-Ion Beam Milling

1998 ◽  
Vol 4 (S2) ◽  
pp. 864-865
Author(s):  
K. Ogura ◽  
R. Alani
Keyword(s):  
Cross Sections ◽  
Chemical Etching ◽  
Vacuum Chamber ◽  
Ion Beam ◽  
Mechanical Grinding ◽  
Ion Beam Etching ◽  
Reliable Technique ◽  
New Approach ◽  
Wet Chemical ◽  
Wet Chemical Etching

The cross-sectioning of semiconductor wafers for SEM studies has traditionally been carried out by tedious and laborious mechanical grinding and polishing techniques. The mechanically polished surfaces are treated using a “wet chemical” etching method to enhance and delineate certain features or layers in a given specimen. The etched specimens are then coated by conductive layers to prevent charging during SEM examination. As an alternative to “wet chemical etching”, broad-ion beam etching techniques have been developed for surface treatment of mechanically polished specimens. More specifically, we have reported [1] the utilization of a combined process of broad-ion beam etching and coating of mechanically cross sectioned semiconductors in a single vacuum chamber. As a further progress to that work, we report a rapid and reliable technique for preparing precision SEM cross sections. The technique is based on perpendicular broad-ion beam milling of cleaved wafers to expose any desired cross-section through a given feature of the specimen.

The diffusion of hydrogen in silicon and mechanisms for “unintentional” hydrogenation during ion beam processing

1987 ◽  
Vol 2 (1) ◽  
pp. 96-106 ◽  
Author(s):  
C. H. Seager ◽  
R. A. Anderson ◽  
J. K. G. Panitz
Keyword(s):  
High Temperature ◽  
Chemical Etching ◽  
Reasonable Agreement ◽  
Ion Beam ◽  
Argon Ion Bombardment ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Boron Acceptor ◽  
Argon Ion ◽  
Diffusion Of Hydrogen

Experiments are described in which hydrogen is injected into silicon by various techniques and detected by the neutralization of boron acceptor sites. Wet chemical etching is shown to inject protons several microns in a few seconds; this experiment is used to set a lower limit on the diffusivity of hydrogen of ⋍2⊠10−11 cm2/s at 300 K, a number in reasonable agreement with prior estimates deduced by Van Wieririgen and Warmholtz from high-temperature permeation measurements. A number of experiments are reported to elucidate the mechanism for “unintentional” hydrogenation occurring during argon ion bombardment. The data suggest that this effect is caused by bombardment-induced injection of hydrogen from surface H2O/hydrocarbon contaminants.

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