Effect of hydrogen on undoped and lightly Si‐doped molecular beam epitaxial GaAs layers

1986 ◽  
Vol 48 (19) ◽  
pp. 1291-1293 ◽  
Author(s):  
Yi‐Ching Pao ◽  
D. Liu ◽  
W. S. Lee ◽  
J. S. Harris
Keyword(s):  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Si Doped

Characterization of high‐purity Si‐doped molecular beam epitaxial GaAs

1985 ◽  
Vol 58 (12) ◽  
pp. 4685-4702 ◽  
Author(s):  
B. J. Skromme ◽  
S. S. Bose ◽  
B. Lee ◽  
T. S. Low ◽  
T. R. Lepkowski ◽  
...  
Keyword(s):  
High Purity ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Si Doped

Low‐resistance nonalloyed ohmic contacts to Si‐doped molecular beam epitaxial GaAs

1985 ◽  
Vol 47 (1) ◽  
pp. 26-28 ◽  
Author(s):  
P. D. Kirchner ◽  
T. N. Jackson ◽  
G. D. Pettit ◽  
J. M. Woodall
Keyword(s):  
Ohmic Contacts ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Low Resistance ◽  
Molecular Beam Epitaxial ◽  
Si Doped

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

scholarly journals Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105cm2 V−1 s−1

1991 ◽  
Vol 58 (5) ◽  
pp. 478-480 ◽  
Author(s):  
C. R. Stanley ◽  
M. C. Holland ◽  
A. H. Kean ◽  
M. B. Stanaway ◽  
R. T. Grimes ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Electrical Characterization ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Photoluminescence characterization of molecular beam epitaxial GaAs grown using cracked AsH3

1984 ◽  
Vol 44 (2) ◽  
pp. 240-242 ◽  
Author(s):  
B. J. Skromme ◽  
G. E. Stillman ◽  
A. R. Calawa ◽  
G. M. Metze
Keyword(s):  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Growth‐induced shallow acceptor defect and related luminescence effects in molecular beam epitaxial GaAs

1990 ◽  
Vol 68 (2) ◽  
pp. 741-754 ◽  
Author(s):  
I. Szafranek ◽  
M. A. Plano ◽  
M. J. McCollum ◽  
S. A. Stockman ◽  
S. L. Jackson ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Shallow Acceptor ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Acceptor Defect

Rapid-Thermal-Processing Induced Deep Level Traps and their Spatial Distribution in MBE GaAs

1987 ◽  
Vol 92 ◽  
Author(s):  
Akio Kitagawa ◽  
Yutaka Tokuda ◽  
Akira Usami ◽  
Takao Wada ◽  
Hiroyuki kano
Keyword(s):  
Thermal Processing ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Spatial Variations ◽  
Molecular Beam Epitaxial ◽  
Gaas Films ◽  
Si Doped ◽  
Transient Spectroscopy

ABSTRACTRapid thermal processing (RTP) using halogen lamps for a Si-doped molecular beam epitaxial (MBE) n-GaAs layers was investigated by deep level transient spectroscopy. RTP was performed at 700°C, 800°C and 900°C for 6 s. Two electron traps NI ( Ec-0.5-0.7eV) and EL2 (Ec - 0.82 eV) are produced by RTP at 800 and 900°C.The peculiar spatial variations of the Nl and EL2 concentration across the MBE GaAs films are observed. The larger concentrations of the trap N1 and EL2 are observed near the edge of the samples, and the minima of N1 and EL2 concentration lie between the center and the edge of the sample. It seems that these spatial variations of N1 and EL2 concentration are consistent with that of the thermal stress induced by RTP. Furthermore, the EL2 concentration near the edge of the sample is suppressed by the contact with the GaAs pieces on the edge around the sample during RTP.

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