Low‐resistance nonalloyed ohmic contacts to Si‐doped molecular beam epitaxial GaAs

1985 ◽  
Vol 47 (1) ◽  
pp. 26-28 ◽  
Author(s):  
P. D. Kirchner ◽  
T. N. Jackson ◽  
G. D. Pettit ◽  
J. M. Woodall
Keyword(s):  
Ohmic Contacts ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Low Resistance ◽  
Molecular Beam Epitaxial ◽  
Si Doped

Characterization of high‐purity Si‐doped molecular beam epitaxial GaAs

1985 ◽  
Vol 58 (12) ◽  
pp. 4685-4702 ◽  
Author(s):  
B. J. Skromme ◽  
S. S. Bose ◽  
B. Lee ◽  
T. S. Low ◽  
T. R. Lepkowski ◽  
...  
Keyword(s):  
High Purity ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Si Doped

Effect of hydrogen on undoped and lightly Si‐doped molecular beam epitaxial GaAs layers

1986 ◽  
Vol 48 (19) ◽  
pp. 1291-1293 ◽  
Author(s):  
Yi‐Ching Pao ◽  
D. Liu ◽  
W. S. Lee ◽  
J. S. Harris
Keyword(s):  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Si Doped

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

scholarly journals Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105cm2 V−1 s−1

1991 ◽  
Vol 58 (5) ◽  
pp. 478-480 ◽  
Author(s):  
C. R. Stanley ◽  
M. C. Holland ◽  
A. H. Kean ◽  
M. B. Stanaway ◽  
R. T. Grimes ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Electrical Characterization ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Photoluminescence characterization of molecular beam epitaxial GaAs grown using cracked AsH3

1984 ◽  
Vol 44 (2) ◽  
pp. 240-242 ◽  
Author(s):  
B. J. Skromme ◽  
G. E. Stillman ◽  
A. R. Calawa ◽  
G. M. Metze
Keyword(s):  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial
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