Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

1986 ◽  
Vol 48 (5) ◽  
pp. 353-355 ◽  
Author(s):  
H. Amano ◽  
N. Sawaki ◽  
I. Akasaki ◽  
Y. Toyoda
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Vapor Phase ◽  
High Quality ◽  
Aln Buffer ◽  
Gan Film

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

1992 ◽  
Vol 61 (22) ◽  
pp. 2688-2690 ◽  
Author(s):  
T. Detchprohm ◽  
K. Hiramatsu ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Vapor Phase ◽  
High Quality ◽  
Zno Buffer Layer ◽  
Gan Film

High quality MOCVD GaN film grown on sapphire substrates using HT-AlN buffer layer

2006 ◽  
Vol 352 (23-25) ◽  
pp. 2332-2334 ◽  
Author(s):  
B. Potì ◽  
M.A. Tagliente ◽  
A. Passaseo
Keyword(s):  
Buffer Layer ◽  
High Quality ◽  
Sapphire Substrates ◽  
Aln Buffer ◽  
Gan Film

High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH3

1999 ◽  
Vol 200 (1-2) ◽  
pp. 63-69 ◽  
Author(s):  
Jin Soo Hwang ◽  
Satoru Tanaka ◽  
Sohachi Iwai ◽  
Yoshinobu Aoyagi ◽  
Seeyearl Seong
Keyword(s):  
Buffer Layer ◽  
Film Growth ◽  
High Quality ◽  
Aln Buffer ◽  
Gan Film

Epitaxial growth of high quality ZnO:Al film on silicon with a thin γ-Al2O3 buffer layer

2003 ◽  
Vol 93 (7) ◽  
pp. 3837-3843 ◽  
Author(s):  
Manoj Kumar ◽  
R. M. Mehra ◽  
A. Wakahara ◽  
M. Ishida ◽  
A. Yoshida
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
High Quality

scholarly journals Liquid phase epitaxial growth of high quality GaAs on InP using Se‐doped GaAs buffer layer and grating‐patterned substrates

1995 ◽  
Vol 66 (19) ◽  
pp. 2531-2533 ◽  
Author(s):  
Dong‐Keun Kim ◽  
Ju‐Heon Ahn ◽  
Byung‐Teak Lee ◽  
H. J. Lee ◽  
S. S. Cha ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Patterned Substrates ◽  
High Quality ◽  
Liquid Phase Epitaxial ◽  
Gaas Buffer Layer ◽  
Liquid Phase Epitaxial Growth

Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth

2009 ◽  
Vol 517 (17) ◽  
pp. 5057-5060 ◽  
Author(s):  
J.H. Yang ◽  
S.M. Kang ◽  
D.V. Dinh ◽  
D.H. Yoon
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Buffer Layer Thickness ◽  
Aln Buffer

Effect of AlN Buffer Layer on AlGaN/α-Al2O3Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy

1988 ◽  
Vol 27 (Part 1, No. 7) ◽  
pp. 1156-1161 ◽  
Author(s):  
Yasuo Koide ◽  
Nobuo Itoh ◽  
Kenji Itoh ◽  
Nobuhiko Sawaki ◽  
Isamu Akasaki
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Aln Buffer

Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer

2006 ◽  
Vol 21 (5) ◽  
pp. 702-708 ◽  
Author(s):  
D Gogova ◽  
D Siche ◽  
R Fornari ◽  
B Monemar ◽  
P Gibart ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Structural Studies ◽  
High Quality ◽  
Aln Buffer

Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer

2012 ◽  
Vol 15 (5) ◽  
pp. H148 ◽  
Author(s):  
J. Park ◽  
H.-J. Lee ◽  
S. W. Lee ◽  
J.-S. Ha ◽  
S. Nagata ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Surface Polarity ◽  
Polarity Effects
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