Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer
2012 ◽
Vol 15
(5)
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pp. H148
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2011 ◽
Vol 40
(8)
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pp. 1637-1641
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Keyword(s):
1994 ◽
Vol 139
(3-4)
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pp. 231-237
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2012 ◽
Vol 45
(41)
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pp. 415306
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2003 ◽
Vol 32
(7)
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pp. 656-660
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Theoretical studies of Si vapor-phase epitaxial growth by Iab initioP molecular-orbital calculations
1990 ◽
Vol 41
(18)
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pp. 12720-12727
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Keyword(s):
Keyword(s):
1972 ◽
Vol 119
(3)
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pp. 381
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