Seeding lateral epitaxy of silicon on insulator with improved seed and cap structure by pseudoline shaped electron beam annealing

1985 ◽  
Vol 47 (7) ◽  
pp. 696-699 ◽  
Author(s):  
K. Suguro ◽  
T. Inoue ◽  
T. Hamasaki ◽  
T. Yoshii ◽  
M. Yoshimi ◽  
...  
Keyword(s):  
Electron Beam ◽  
Silicon On Insulator ◽  
Lateral Epitaxy

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

2005 ◽  
Vol 239 (3-4) ◽  
pp. 327-334 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Silicon On Insulator ◽  
Ultra High Vacuum

Subboundary Free Submicronic Devices on Laser-Recrystallized Silicon Oninsulator

1984 ◽  
Vol 35 ◽  
Author(s):  
A.J. Auberton-Herve ◽  
J.P. Joly ◽  
J.M. Hode ◽  
J.C. Castagna
Keyword(s):  
Channel Length ◽  
Silicon On Insulator ◽  
Ring Oscillator ◽  
Mos Transistors ◽  
Seed Structure ◽  
Leakage Currents ◽  
Industrial Processing ◽  
Laser Recrystallization ◽  
Dynamic Performances ◽  
Lateral Epitaxy

ABSTRACTSeeding from bulk silicon (lateral epitaxy) has been used in Ar+ laser recrystallization to achieve subboundary free silicon on insulator areas. On these areas C.MOS devices have been performed using almost entirely the standard processing steps of a bulk micronic C-MOS technology. n -MOS transistors with channel length as small as 0.3 um have shown very small leakage currents. This is attributed especially to the lack of subboundaries. A 40 % increase in the dynamic performances in comparison with equivalent size C-MOS bulk devices has been obtained (93 ps of delay time per stage for a 101 stages ring oscillator with 0.8 μm of channel length). This is the best result presented so far on recrystallized SOI. No special requirements are needed in the lay out of the circuit with the chosen seed structure. Furthermore an industrial processing rate for the laser recrystallization processing has been achieved using an elliptical laser beam, a high scan velocity (30 cm/s) and a 100 μm line to line scan step (a 4' wafer in 4 minutes).

High-Q Silicon-on-Insulator Micro-Ring Resonator with Silica Covering

2013 ◽  
Vol 684 ◽  
pp. 443-446
Author(s):  
Chao Liu ◽  
Chen Yang Xue ◽  
Dan Feng Cui ◽  
Jun Bin Zang ◽  
Yong Hua Wang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Transmission Spectrum ◽  
Electron Beam Lithography ◽  
Ring Resonator ◽  
Sio2 Layer ◽  
Silicon On Insulator ◽  
New Method ◽  
Ring Resonators ◽  
Q Factor ◽  
High Q

We designed High-Q micro-ring resonators based on SOI material. A new method of using a top SiO2 layer to cover the waveguide is applied and the tested Q factor is as high as 1.0135×104. Micro-ring resonator has been fabricated using Electron-Beam Lithography and Inductive Coupled Plasma. OptiFDTD was used to simulate the micro-ring resonator and we compared the transmission spectrum of this resonator with the resonator without SiO2 covering.

Nano-Imprint Patterning of Nanowire Structures for Interconnect Study

2005 ◽  
Author(s):  
Bin Li ◽  
Anastassios Mavrokefalos ◽  
Jianhua Zhou ◽  
Li Shi ◽  
Paul S. Ho ◽  
...  
Keyword(s):  
Electron Beam ◽  
Cross Section ◽  
Silicon Nanowires ◽  
Size Effects ◽  
Silicon On Insulator ◽  
Si Nanowires ◽  
Section Surface ◽  
Etching Mask ◽  
Interconnect Lines ◽  
Nano Imprint

A thermal nano-imprint method has been developed to pattern sub-40 nm polymer lines of Hydrogensilsesquioxane (HSQ) and electron beam resist ZEP 520A. The imprint template was the cross section surface of a selectively etched GaAs/AlGaAs heterostructure wafer. Silicon nanowires were formed using reactive ion etching (RIE) of a silicon-on-insulator wafer with the polymer nanolines as an etching mask. The obtained Si nanowires were well defined and continuous for a length up to hundreds of microns. Reaction of the silicon lines with a metal can lead to the formation of silicide interconnect lines, which is used to investigate the size effects on the transport and electromigration properties of interconnects for future microelectronics.

Lateral Epitaxy of Si Films Deposited in a UHV Ambient by Electron Beam Annealing

1983 ◽  
Author(s):  
Tomoyasu Inoue ◽  
Kenji Shibata ◽  
Koichi Kato ◽  
Yuichi Mikata ◽  
Masahiro Kashiwagi
Keyword(s):  
Electron Beam ◽  
Lateral Epitaxy ◽  
Si Films

A Study of Melting and Resolidification of Silicon-on-Insulator Structures Formed by Lateral Epitaxy

1985 ◽  
Vol 53 ◽  
Author(s):  
D A Williams ◽  
R A Mcmahon ◽  
D G Hasko ◽  
H Ahmed ◽  
G F Hopper ◽  
...  
Keyword(s):  
Cross Sections ◽  
Silicon On Insulator ◽  
One Dimensional ◽  
Wide Range ◽  
Background Temperature ◽  
Lateral Epitaxy ◽  
Polycrystalline Silicon Films ◽  
Beam Technique ◽  
Sweep Speed

ABSTRACTThe formation of silicon-on-insulator structures, by recrystallising polycrystalline silicon films with a dual electron beam technique, has been studied over a wide range of conditions. The quality of the layers has been assessed by examining cross-sections in the SEM and optical microscopy of the surface after a Secco etch. The range of line powers which gives device-worthy single crystal material becomes greater as the sweep speed increases and as the background temperature is reduced. The extent of melting into the substrate in the seed windows and below the isolating oxide was determined from the movement of an arsenic implant. The experimental results are compared to the predictions from a one dimensional model for the heat flow.

Characteristics of Recrystallised Polysilicon on SiO2 Produced by Dual Electron Beam Processing

1982 ◽  
Vol 13 ◽  
Author(s):  
J.R. Davis ◽  
R.A. Mcmahon ◽  
H. Ahmed
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Processing Conditions ◽  
Crystal Silicon ◽  
Electron Beam Processing ◽  
Free Region ◽  
Beam Heating ◽  
Lateral Epitaxy ◽  
Electron Beam Heating

ABSTRACTThis paper describes the production of large areas of precisely oriented, defect-free, single crystal silicon films on SiO2 by dual electron beam heating of deposited polysilicon using lateral epitaxy. Defects which occur in the film far from the seeding window are characterised, and the dependence of the area of the defect-free region on the processing conditions is discussed.

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