Consideration on the void generation mechanism in electron‐beam recrystallized silicon‐on‐insulator films

1989 ◽  
Vol 65 (5) ◽  
pp. 2057-2063 ◽  
Author(s):  
Susumu Horita ◽  
Hiroshi Ishiwara
Keyword(s):  
Electron Beam ◽  
Silicon On Insulator ◽  
Generation Mechanism

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

2005 ◽  
Vol 239 (3-4) ◽  
pp. 327-334 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Silicon On Insulator ◽  
Ultra High Vacuum

scholarly journals Supershort avalanche electron beam generation in gases

2008 ◽  
Vol 26 (4) ◽  
pp. 605-617 ◽  
Author(s):  
V.F. Tarasenko ◽  
E.H. Baksht ◽  
A.G. Burachenko ◽  
I.D. Kostyrya ◽  
M.I. Lomaev ◽  
...  
Keyword(s):  
High Pressure ◽  
Electron Beam ◽  
Atmospheric Pressure ◽  
Electron Beams ◽  
Solid Angle ◽  
Generation Mechanism ◽  
Full Width ◽  
Half Maximum ◽  
Electron Beam Pulse ◽  
Supershort Avalanche Electron Beam

AbstractThis paper reports on the properties of a supershort avalanche electron beam generated in the air or other gases under atmospheric pressure and gives the analysis of a generation mechanism of supershort avalanche electron beam, as well as methods of such electron beams registration. It is reported that in the air under the pressure of 1 atm, a supershort (<100 ps) avalanche electron beam is formed in the solid angle more than 2π steradian. The electron beam has been obtained behind a 45 µm thick Al-Be foil in SF6 and Xe under the pressure of 2 atm, and in He, under the pressure of about 15 atm. It is shown that in SF6 under the high pressure (>1 atm) duration (full width at half maximum) of supershort avalanche electron beam pulse is about 150 ps.

High-Q Silicon-on-Insulator Micro-Ring Resonator with Silica Covering

2013 ◽  
Vol 684 ◽  
pp. 443-446
Author(s):  
Chao Liu ◽  
Chen Yang Xue ◽  
Dan Feng Cui ◽  
Jun Bin Zang ◽  
Yong Hua Wang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Transmission Spectrum ◽  
Electron Beam Lithography ◽  
Ring Resonator ◽  
Sio2 Layer ◽  
Silicon On Insulator ◽  
New Method ◽  
Ring Resonators ◽  
Q Factor ◽  
High Q

We designed High-Q micro-ring resonators based on SOI material. A new method of using a top SiO2 layer to cover the waveguide is applied and the tested Q factor is as high as 1.0135×104. Micro-ring resonator has been fabricated using Electron-Beam Lithography and Inductive Coupled Plasma. OptiFDTD was used to simulate the micro-ring resonator and we compared the transmission spectrum of this resonator with the resonator without SiO2 covering.

Nano-Imprint Patterning of Nanowire Structures for Interconnect Study

2005 ◽  
Author(s):  
Bin Li ◽  
Anastassios Mavrokefalos ◽  
Jianhua Zhou ◽  
Li Shi ◽  
Paul S. Ho ◽  
...  
Keyword(s):  
Electron Beam ◽  
Cross Section ◽  
Silicon Nanowires ◽  
Size Effects ◽  
Silicon On Insulator ◽  
Si Nanowires ◽  
Section Surface ◽  
Etching Mask ◽  
Interconnect Lines ◽  
Nano Imprint

A thermal nano-imprint method has been developed to pattern sub-40 nm polymer lines of Hydrogensilsesquioxane (HSQ) and electron beam resist ZEP 520A. The imprint template was the cross section surface of a selectively etched GaAs/AlGaAs heterostructure wafer. Silicon nanowires were formed using reactive ion etching (RIE) of a silicon-on-insulator wafer with the polymer nanolines as an etching mask. The obtained Si nanowires were well defined and continuous for a length up to hundreds of microns. Reaction of the silicon lines with a metal can lead to the formation of silicide interconnect lines, which is used to investigate the size effects on the transport and electromigration properties of interconnects for future microelectronics.

TEM and SEM Studies of Multiple Silicon on Insulator Films for Three Dimensional Circuits.

1987 ◽  
Vol 107 ◽  
Author(s):  
D.A. Williams ◽  
R.A. McMahon ◽  
H. Ahmed ◽  
K.M. Barfoot ◽  
D.J. Godfrey ◽  
...  
Keyword(s):  
Electron Beam ◽  
Three Dimensional ◽  
Silicon On Insulator ◽  
Beam Technique ◽  
Sem Studies

AbstractMultiple layers of silicon on insulator have been recrystallized using a dual electron beam technique. The aim of the investigations was to produce structures suitable for three dimensional circuit applications, and so a number of strategies have been used, providing a range of opportunities for such applications. In particular, two layers of silicon on insulator have been recrystallized simultaneously, and also a second layer has been recrystallized, seeded from a previously regrown film.

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