Complementary metal‐oxide‐silicon field‐effect transistors fabricated in 4‐MeV boron‐implanted silicon

K. W. Terrill; P. F. Byrne; C. Hu; N. W. Cheung

doi:10.1063/1.95470

Complementary metal‐oxide‐silicon field‐effect transistors fabricated in 4‐MeV boron‐implanted silicon

Applied Physics Letters ◽

10.1063/1.95470 ◽

1984 ◽

Vol 45 (9) ◽

pp. 977-979 ◽

Cited By ~ 12

Author(s):

K. W. Terrill ◽

P. F. Byrne ◽

C. Hu ◽

N. W. Cheung

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Silicon

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Effect of the bulk charge on the thermal noise in metal-oxide-silicon field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1965.15594 ◽

1965 ◽

Vol 12 (9) ◽

pp. 509-509

Author(s):

C.T. Sah ◽

F.H. Hielscher ◽

S.Y. Wu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Thermal Noise ◽

Field Effect Transistors ◽

Bulk Charge ◽

Metal Oxide Silicon

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THE FABRICATION AND CHARACTERIZATION OF METAL-OXIDE-SILICON CAPACITORS AND FIELD-EFFECT TRANSISTORS USING Dy2O3 AND Sm2O3 GATE DIELECTRICS

Integrated Ferroelectrics ◽

10.1080/10584580802088892 ◽

2008 ◽

Vol 97 (1) ◽

pp. 111-120 ◽

Cited By ~ 4

Author(s):

Yu-Ren Hwang ◽

Ingram Yin-ku Chang ◽

Ming-tsong Wang ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Fabrication And Characterization ◽

Metal Oxide Silicon

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Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method

Applied Physics Letters ◽

10.1063/1.1506776 ◽

2002 ◽

Vol 81 (11) ◽

pp. 2050-2052 ◽

Cited By ~ 21

Author(s):

Ga-Won Lee ◽

Jae-Hee Lee ◽

Hae-Wang Lee ◽

Myoung-Kyu Park ◽

Dae-Gwan Kang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Charge Pumping ◽

High K ◽

Metal Oxide Silicon ◽

High K Gate Dielectric

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Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2844348 ◽

2008 ◽

Vol 103 (4) ◽

pp. 044505 ◽

Cited By ~ 31

Author(s):

J. P. Campbell ◽

P. M. Lenahan ◽

A. T. Krishnan ◽

S. Krishnan

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Scale ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Metal Oxide Silicon

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Damage to sub-half-micron metal-oxide-silicon field-effect transistors from plasma processing of low- k polymer interlayer dielectrics

Semiconductor Science and Technology ◽

10.1088/0268-1242/15/4/301 ◽

2000 ◽

Vol 15 (4) ◽

pp. 309-314 ◽

Cited By ~ 3

Author(s):

L Trabzon ◽

O O Awadelkarim

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Plasma Processing ◽

Interlayer Dielectrics ◽

Metal Oxide Silicon ◽

Low K

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Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrier for High-Performance p-Channel Metal–Oxide–Silicon Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04da03 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DA03 ◽

Cited By ~ 7

Author(s):

Hiroaki Tanaka ◽

Tatsunori Isogai ◽

Tetsuya Goto ◽

Akinobu Teramoto ◽

Shigetoshi Sugawa ◽

...

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Contact Resistivity ◽

Metal Oxide Silicon

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Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590896 ◽

1999 ◽

Vol 17 (5) ◽

pp. 2216 ◽

Cited By ~ 1

Author(s):

L. Trabzon ◽

O. O. Awadelkarim ◽

J. Werking

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interlayer Dielectric ◽

Metal Oxide Silicon

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Concise Short-Channel Effect Model for Inversion-type Ultrathin Silicon-on-Insulator p-Channel Metal-Oxide-Silicon Field-Effect Transistors Based on Partitioning of Thin-Film

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.6340 ◽

1995 ◽

Vol 34 (Part 1, No. 12A) ◽

pp. 6340-6345

Author(s):

Shiao-Shien Chen ◽

James B. Kuo

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon On Insulator ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Effect Model ◽

Metal Oxide Silicon

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Improving SiO2/SiGe interface of SiGe p-metal–oxide–silicon field-effect transistors using water vapor annealing

Applied Physics Letters ◽

10.1063/1.1445806 ◽

2002 ◽

Vol 80 (10) ◽

pp. 1773-1775 ◽

Cited By ~ 11

Author(s):

T. Ngai ◽

X. Chen ◽

J. Chen ◽

S. K. Banerjee

Keyword(s):

Water Vapor ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Vapor Annealing ◽

Metal Oxide Silicon

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Identification of the Microscopic Structure of New Hot Carrier Damage Centers in Short Channel Mosfets

MRS Proceedings ◽

10.1557/proc-473-181 ◽

1997 ◽

Vol 473 ◽

Cited By ~ 1

Author(s):

C. A. Billman ◽

P. M. Lenahan ◽

W. Weber

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Microscopic Structure ◽

Short Channel ◽

Hot Carrier ◽

Metal Oxide Silicon ◽

First Time

ABSTRACTWe show, for the first time, that E'like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomenon.

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